The Si-based MOSFET (metal oxide semiconductor field effect transistor) remains the key element of logic and memory devices in a wide variety of applications. These applications are at the technical core of modern society and play a critical (although often invisible) role in every day operations, such as computing, networking, sensors, telecommunication, and data storage. Although Si-based MOSFET's are quickly approaching several fundamental limits, scaling can be continued for a few more years by replacing different materials in the transistor gate region such as the Si channel, SiON gate dielectric, and poly-Si gate electrode with higher mobility semiconductors, higher permittivity insulators, and metal gate electrodes, respectively. Device performance can also be significantly improved by exploring totally new structures and device principles. For example, we now see the emergence of very novel one dimensional technologies based upon carbon nanotubes and semiconductor nanowires. Much development has taken place in both these fields, and while practical applications are perhaps years away, these advances certainly point to new functionality that could be realized - from three dimensional applications, to heterogeneous integration of dissimilar materials on the same platform, to the integration of optoelectronics with electronics.

Oxide-based materials in various forms present a bewildering array of multi-functional, often coupled, properties including superconductivity, ferromagnetism, ferroelectricity, high mobility, magneto-resistance, and more. Their exceptional properties lead to the possibility of entirely novel devices. The meeting will explore exciting developments in the field for a range of oxides applications in, for example, spintronics, quantum computing, and solid-state lighting. Some applications offer radical alternatives to silicon and other existing materials, while others could be integrated on the ever-developing silicon platform to permit new functionality. Forefront technologies in optoelectronics, sensors or correlated electronics may also be facilitated by the integration of spin, optical and other functionalities with electronic transport in silicon devices.

To make progress in overcoming the many fundamental obstacles blocking development in these technologies, and to improve our basic knowledge of these emerging materials, we have formulated a meeting, the main goal of which is to develop an atomic-scale understanding of this broad new class of materials. The dream is to use our fundamental knowledge of materials to enable either a significant enhancement or entirely new classes of devices. During our planned four-day meeting, leading scientists and engineers will meet, tutor each other about their recent results and thinking, and perhaps come to some consensus as to where research and development should be directed over the next five years. The invited speakers represent a diverse group of scientists and engineers from all corners of the world that bring a broad array of strengths to the meeting. They come from academic, industrial and governmental labs including both experimental and theoretical specialists with background in basic and applied areas of physics, chemistry, electrical engineering, and materials science. In the problems surrounding next-generation materials and devices it is necessary for theoretical quantum chemists to speak with processing engineers, and device engineers and modelers to listen to surface physicists and solid state chemists. The problems are complex and demand a broad and integrated vision.