Citation of My Work

<body topmargin=0 leftmargin=0 marginheight=0 marginwidth=0> <table cellpadding=0 cellspacing=0 border=0><tr> <td valign="top" colspan=2 height=2 BGCOLOR="#CC9900" TEXT="#080000" bgproperties="fixed" background="006005c0dwnjzk.gif"> <div> <A HREF="index.htm" TARGET="_top" TITLE="Mamidala Jagadesh Kumar"><U><B>home</B></U></A><B>     | </B><B> </B><B> </B><B>  </B><FONT SIZE="5" COLOR="#FFCC66" FACE="Arial" ><B>Mamidala Jagadesh Kumar</B></FONT></div> <div> <A HREF="id13.htm" TARGET="_top" TITLE="Research Interests"><U><B>Research Interests</B></U></A><B>   |   </B><A HREF="id11.htm" TARGET="_top" TITLE="List of Publications"><U><B>List of Publications</B></U></A><B>   |   </B><B>Citation of My Work</B><B>   |   </B><A HREF="id18.htm" TARGET="_top" TITLE="Sponsored Research"><U><B>Sponsored Research</B></U></A><B>   |   </B><A HREF="id44.htm" TARGET="_top" TITLE="Professional Recognition"><U><B>Professional Recognition</B></U></A></div> <div> </div> </td> </tr><tr> <td valign="top" width=175 BGCOLOR="#EEEEEE" TEXT="#080000"> <div> Citation of My Work</div> <bR> <div> <A HREF="id4.htm" TARGET="_top" TITLE="Research"><U><B><U><IMG SRC="01d141e0.gif" border=0 width="20" height="30" ALIGN="BOTTOM" HSPACE="0" VSPACE="0"></U></B></U></A><A HREF="id4.htm" TARGET="_top" TITLE="Research"><U><B><U>Research</U></B></U></A></div> <bR> <div> <A HREF="id13.htm" TARGET="_top" TITLE="Research Interests"><U><U>Research Interests</U></U></A></div> <div> <A HREF="id11.htm" TARGET="_top" TITLE="List of Publications"><U><U>List of publications</U></U></A></div> <div> <A HREF="id12.htm" TARGET="_top" TITLE="Citation of My Work"><U><U>Citation of My work</U></U></A></div> <div> <A HREF="id18.htm" TARGET="_top" TITLE="Sponsored Research"><U><U>Sponsored Research</U></U></A></div> <div> <A HREF="id44.htm" TARGET="_top" TITLE="Professional Recognition"><U><U>Professional Membership </U></U></A></div> <bR> <div> <U>____________________</U></div> <DIV ALIGN="LEFT"></DIV> <div> <A HREF="index.htm" TARGET="_top" TITLE="Mamidala Jagadesh Kumar"><U><U>Home</U></U></A></div> <div> <A HREF="id3.htm" TARGET="_top" TITLE="Introduction"><U><U>Introduction</U></U></A></div> <div> <A HREF="id4.htm" TARGET="_top" TITLE="Research"><U><U>Research</U></U></A></div> <div> <A HREF="id5.htm" TARGET="_top" TITLE="Teaching"><U><U>Teaching</U></U></A></div> <div> <A HREF="id6.htm" TARGET="_top" TITLE="Student Guidance"><U><U>Student Guidance</U></U></A></div> <div> <A HREF="id53.htm" TARGET="_top" TITLE="Administration"><U><U>Administration</U></U></A></div> <div> <A HREF="id7.htm" TARGET="_top" TITLE="Interesting Stuff"><U><U>Interesting Stuff</U></U></A></div> </td> <td valign="top" height=478 BGCOLOR="#FFFFFF" TEXT="#080000"> <bR> <div> Citation of my papers by other researchers</div> <div> <B>Total: 766 Citations</B></div> <div> <I><B> <span id='badgeCont376049' style='width:126px'><script src='http://labs.researcherid.com/mashlets?el=badgeCont376049&mashlet=badge&showTitle=false&className=a&rid=I-4264-2012'></script></span>  </B></I></div> <div> <A HREF="http://scholar.google.co.in/citations?user=zgxxvhQAAAAJ" TARGET="_top" TITLE="http://scholar.google.co.in/citations?us"><U><U>Google Scholar Citations</U></U></A></div> <div> <TABLE BORDER="1" CELLPADDING="1" CELLSPACING="1" WIDTH="693" BORDERCOLORLIGHT="#C0C0C0" BORDERCOLORDARK="#808080" FRAME="BOX" RULES="ALL" ALIGN="LEFT" HSPACE="0" VSPACE="0" > <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><div> <B>Year</B></div> </tD> <tD VALIGN=TOP WIDTH="46"><div> <B>Cita-tions </B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> <B>Citing Authors </B></div> </tD> <tD VALIGN=TOP WIDTH="61"><div> <B>Year of citing</B></div> <div> <B>publication</B></div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <B>Name of Journal</B></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> <B>Vol</B></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> <B>Page No</B></div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><div> <B>2011</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 WIDTH="625"><div> Tarun Kumar Agarwal, Amit R. Trivedi, Vaidyanathan Subramanian and M. Jagadesh Kumar, "Compact Modeling of Partially Depleted Silicon-on-Insulator Drain-Extended MOSFET (DEMOS) including High-voltage and Floating Body Effects," <I><B>IEEE Trans. on on Electron Devices,</B></I> Vol.58, pp.3485-3493, October <B>2011.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 99 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="99" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Rachida Bensegueni, Saida Latreche</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Conference: Mathematical Science and Applications, </B></I><I>December 26-31, 2012, </I><I><B>Abu Dhabi University, </B></I><I>Abu Dhabi, United Arab Emirates</I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="99" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 33 WIDTH="45"><div> <B>2011</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 WIDTH="625"><div> Sneh Saurabh and M. Jagadesh Kumar, "Investigation of the Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field Effect Transistor,"<B>  IEEE Trans. on on Electron Devices, </B>Vol.58, pp.404-410, February<B>  2011.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Bhargav K. Mamill,  Rahul Mishr, Sooraj Nair and  Bahniman Ghosh</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Electronics Communication and Computer Technology (IJECCT)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 1 Issue 2</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.26-29</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>2</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ning Cui, Renrong Liang, Jing Wang, and Jun Xua</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>AIP ADVANCES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.2</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No: 022111</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>3</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Haijun Lou, Lining Zhang, Yunxi Zhu, Xinnan Lin, Shengqi Yang, Jin He, and Mansun Chan</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> VOL. 59, NO. 7</div> </tD> <tD VALIGN=TOP><NOBR><div> pp:1829-1836</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>4</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Min Jin Lee and Woo Young Choi</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>IEEE Electron Device Letters</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.33, No.10</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.1459-1461</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>5</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ning Cui, Renrong Liang, Jing Wang and Jun Xu</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>12th IEEE International Conference on Nanotechnology (IEEE-NANO)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-5</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>6</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> M. Kamali Moghaddam, S.E. Hosseini</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal on “Technical and Physical Problems of Engineering” </B></I><I><B>www.iotpe.com</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.44</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.95-99</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>7</B></div> </tD> <tD VALIGN=TOP><NOBR><div> Ghosh, S.; Sarkar, C.K</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Communications, Devices and Intelligent Systems (CODIS), 2012 International Conference on</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.153-156</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>8</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Aixi Zhang, Jinhe Mei, Lining Zhang, Hongyu He, Jin He, and Mansun Chan</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on,</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-5</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>9</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Wang Bin, Lou Yong-Le and Zhou Chun-Yu</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Chin. Phys. B </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 22, No. 3</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No.<FONT SIZE="2" COLOR="#000000" FACE="NimbusRomNo9L-Medi" >038501</FONT></div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 10</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Yu Chen Li, He Ming Zhang, Hui Yong Hu, Yu Ming Zhang, Bin Wang, Chun Yu Zhou, Yong Le Lou</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Applied Mechanics and Materials</B></I><I><B> </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.<FONT SIZE="2" COLOR="#000000" FACE="Arial" >275-277</FONT></div> <bR> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.184-187</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=3 HEIGHT= 49 WIDTH="45"><div> <B>2010</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#EEEEEE WIDTH="625"><div> Sneh Saurabh and M. Jagadesh Kumar, "Estimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliability," <I><B>IEEE Trans. on Device and Materials Reliability,</B></I>  Vol.10, pp.390 - 395, September <B>2010. </B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Xuebei Yang ; Mohanram, K. ; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Design, Automation & Test in Europe Conference & Exhibition (DATE), 2011 </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> ISBN: 978-1-61284-208-0</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp:1-6</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>2</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Saripalli, Vinay ; Datta, Suman ; Narayanan, Vijaykrishnan ; Kulkarni, Jaydeep P. ; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Nanoscale Architectures (NANOARCH), 2011 IEEE/ACM International Symposium on </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> ISBN: 978-1-4577-0993-7 </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> <B>pp:</B>45-52 </div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>3</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Gibong LEE  Woo Young CHOI  </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEICE TRANSACTIONS on Electronics </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.E95-C  No.5</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.910-913</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 35 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="35" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>4</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Greg Leung and Chi On Chui</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Vol.60(1)</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.84-91</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=4 HEIGHT= 49 WIDTH="45"><div> <B>2010</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> Radhakrishnan Sithanandam and M. Jagadesh Kumar “Linearity and speed optimization in SOI LDMOS using gate engineering,” <I><B>Semiconductor Science and Technology,</B></I> Vol.25, Article No. 015006, pp1-6, January <B>2010.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Orouji, Ali A.; Moghadam, Hamid Amini; Dideban, A.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> vol.43 (1)</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> 498-502</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>2</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Z. Dibi, F. Djeffal, and N. Lakhdar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>World Academy of Science, Engineering and Technology </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.48</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-4</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>3</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chen Hu, Ming Li, Xiaoying He, Weifeng Sun</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>IETE Technical Review</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.28</div> </tD> <tD VALIGN=TOP><NOBR><div> Page : 327-335</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><div> <B>2010</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#EEEEEE WIDTH="625"><div> Radhakrishnan Sithanandam and M. Jagadesh Kumar, "A new Hetero-material Stepped Gate SOI LDMOS for RF Power Amplifier Applications," Accepted for presentation in  <I><B>23rd International Conference on VLSI Design, </B></I>January 3 - 7, 2010, NIMHANS Convention Centre Bangalore, INDIA. pp.230-234. </div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Qin Xu, Yufeng Guo, Ying Zhang, Leilei Liu, Jiafei Yao, Gene Sheu</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Procedia Engineering; 2012 International Workshop on Information and Electronics Engineering</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Volume 29</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Pages 668–672</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=5 HEIGHT= 33 WIDTH="45"><div> <B>2010</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> M. Jagadesh Kumar and Radhakrishnan Sithanandam, “Extended-p+ Stepped Gate (ESG) LDMOS for Improved Performance,” <I><B>IEEE Trans. on Electron Devices,</B></I> Vol.57, pp.1719 - 1724, July <B>2010</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Orouji, Ali A.; Moghadam, Hamid Amini; Dideban, A. </div> </tD> <tD VALIGN=TOP><NOBR><div> NOV 2010</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES </B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Vol.43 (1)</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> 498-502</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>2</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Mahabadi, S. E. Jamali; Orouji, Ali A.; Keshavarzi, P.; Moghadam, Hamid Amini</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>SEMICONDUCTOR SCIENCE AND TECHNOLOGY</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol: 26</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 095005</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>3</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chen Hu, Ming Li, Xiaoying He, Weifeng Sun</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>IETE Technical Review</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.28</div> </tD> <tD VALIGN=TOP><NOBR><div> Page : 327-335</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>4</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jamali Mahabadi, S.E., Orouji, A.A., Keshavarzi, P., Rajabi, S., Moghadam, H.A., Haghighi, M.I.P.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Conference on Signal Processing,</B></I></div> <div> <I><B>Communication, Computing and Networking Technologies, ICSCCN-2011</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> art. no.</div> <div> 6024538, pp. 174-177</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>5</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div>  Li Qi, Zhu Jin-Luan, Wang Wei-Dong, Wei Xue-Ming</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>CHINESE PHYSICS B</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 20   Issue: 11</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 117202</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 82 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>6</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Prima Sukma Permata, Mohammed Sadique Anwar, Md. Imran Siddiqui, Shao-Ming Yang, Jung-Ruey Tsai, and Gene Sheu</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Conference on Optoelectronics and Microelectronics (ICOM)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.519-523</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>7</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Nitin Goyal and Raghvendra Sahai Saxena</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>IEEE Electron Device Letters</B></I></div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Vol.34(1)</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.90-92</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>8</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Yue Hu, Gaofeng Wang, Sheng Chang, Hao Wang & Qijun Huang</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Electronics</B></I></div> <div> <A HREF="http://www.tandfonline.com/doi/abs/10.1080/00207217.2013.769184" TARGET="_top" TITLE="http://www.tandfonline.com/doi/abs/10.10"><U><I><B>Available online</B></I></U></A></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><div> <B>2010</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar, L. Lunardi, G. Meneghesso, S. Pearton and E. F. Schubert, "Special Issue on Light Emitting Diodes", <I><B>IEEE Transactions on Electron Devices</B></I>, Vol. 57, pp.7-11, January <B>2010</B> </div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Marius Bâzu, Titu Bajenescu</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> Failure Analysis – When?, in Failure Analysis: A Practical Guide for Manufacturers of Electronic Components and Systems, John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9781119990093.ch3</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=4 HEIGHT= 34 WIDTH="45"><div> <B>2009</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar, "Evaluating Scientists: Citations, Impact Factor, h-Index, Online Page Hits and What Else?" <I><B>IETE Technical Review,</B></I> Vol.26 (3), pp.165-168, May-June <B>2009</B>.</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Bornmann L </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> MAR-APR 2010 </div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>IETE TECHNICAL REVIEW</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol: 27</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages: 93-96 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Arto Kaarna</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>8TH CONFERENCE OF FINNISH-RUSSIAN UNIVERSITY COOPERATION IN TELECOMMUNICATIONS</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> fruct.org</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.250-251</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Manh Cuong Pham, Ralf Klamma and Matthias Jarke</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011 </div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>arXiv:1103.1977 </B></I><FONT SIZE="2" COLOR="#0000FF" FACE="Arial" ><U>http://arxiv.org/abs/1103.1977</U></FONT> </div> <bR> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 34 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> LUO Yuanyuan, TIAN Shujun, YU Xiaodan  </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Science and Technology Management Research</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> No.14</div> </tD> <tD VALIGN=TOP><NOBR><div> Page 68-71,75 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 34 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Manh Cuong Pham, Ralf Klamma and Matthias Jarke</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>SOCIAL NETWORK ANALYSIS AND MINING</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 1, Number 4</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> 321-340</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 34 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP><NOBR><div>  Char, D.C.P., Ajiferuke, I.</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Evidence Based Library and Information Practice</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 6 (1)</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 41-52</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 34 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="46" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="161"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="161" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="61"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="61" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="187"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="187" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=6 HEIGHT= 34 WIDTH="45"><div> <B>2009</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar, "Memristor: Why do we have to know about it?," <I><B>IETE Technical Review,</B></I> Vol.26 (1), pp.3-6, January-February <B>2009</B>.</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chandra S </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> MAR-APR 2010</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>IETE TECHNICAL REVIEW</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol: 27</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages: 179-180 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Umul, Y.Z.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Progress In Electromagnetics Research Letters</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.18</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp:19-28 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> <I>R. J. O'Dowd</I></div> <bR> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="317"><div> <I><B>A Survey of Electronics Obsolescence and Reliability</B></I></div> <div> <A HREF="http://dspace.dsto.defence.gov.au/dspace/bitstream/1947/10071/1/DSTO-TR-2437PR.pdf" TARGET="_top" TITLE="http://dspace.dsto.defence.gov.au/dspace"><U><U>http://dspace.dsto.defence.gov.au/dspace/bitstream/1947/10071/1/DSTO-TR-2437PR.pdf</U></U></A></div> <div> Air Operations Division Defence Science and Technology Organisation</div> </tD> <tD VALIGN=TOP><NOBR><div> DSTO-TR-2437</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jungho Shin, Insung Kim, Kuyyadi P. Biju, Minseok Jo, Jubong Park, Joonmyoung Lee, Seungjae Jung, Wootae Lee, Seonghyun Kim, Sangsu Park, and Hyunsang Hwang</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JOURNAL OF APPLIED PHYSICS </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.109</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No.033712</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Yenpo Ho, Garng M. Huang, Peng Li</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Transactions on Circuits and Systems I Regular Papers.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> VOL. 58, NO. 4</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.724-736</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 82 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP><NOBR><div> Konrad Szacilowski</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP COLSPAN=2 WIDTH="253"><div> <B>Molecular-Scale Electronics, in Infochemistry: Information Processing at the Nanoscale, John Wiley & Sons, Ltd, Chichester, UK. doi: 10.1002/9780470710883.ch8</B></div> </tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 89 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="89" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 7</div> </tD> <tD VALIGN=TOP><NOBR><div> Ordosgoitti, Jorhan Rainier</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP COLSPAN=2 WIDTH="253"><div> <I><B>Master's thesis in Electrical Engineering submitted to T</B></I><I><B>he University of Toledo, USA</B></I></div> <bR> <div> <A HREF="http://rave.ohiolink.edu/etdc/view?acc_num=toledo1290131827" TARGET="_top" TITLE="http://rave.ohiolink.edu/etdc/view?acc_n"><U><I><B>http://rave.ohiolink.edu/etdc/view?acc_num=toledo1290131827</B></I></U></A></div> <bR> </tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="89" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 34 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 8</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> TD Dongale</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP COLSPAN=2><NOBR><div> <A HREF="https://nanohub.org/resources/16590" TARGET="_top" TITLE="https://nanohub.org/resources/16590"><U><I><B>https://nanohub.org/resources/16590</B></I></U></A></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=6 HEIGHT= 49 WIDTH="45"><div> <B>2009</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> Raghavendra S. Saxena and M. Jagadesh Kumar “Dual Material Gate Technique for Enhanced Transconductance and Breakdown Voltage of Trench Power MOSFETs ,” <I><B>IEEE Trans. on Electron Devices,</B></I> Vol.56, pp.517-522, March <B>2009.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chiang, T.-K.</div> </tD> <tD VALIGN=TOP><NOBR><div> July 2009</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Reliability</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Pages 693-698</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ha, J.-B.; Kang, H.-S.; Baek, K.-J.; Lee, J.-H.; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> August 2010</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>IEEE Electron Device Letters</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 31 , Issue: 8</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Page(s): 848 - 850 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ha, J.-B., Kang, H.-S., Kim, K.-W., Im, K.-S., Kim, D.-S., Kwak, E.-H., Kim, S.-N., Lee, S.-G., Lee, J.-H. </div> </tD> <tD VALIGN=TOP><NOBR><div> June 2010</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>15th Silicon Nanoelectronics Workshop</B></I>, SNW 2010; Honolulu, HI; 13 June 2010 through 14 June 2010</div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Article number 5562564 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Z. Dibi, F. Djeffal, and N. Lakhdar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>World Academy of Science, Engineering and Technology </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.48</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-4</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP><NOBR><div> Lishan Yu, Quanyuan Feng</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Energy Procedia - The Proceedings of International Conference on Smart Grid and Clean Energy Technologies (ICSGCE 2011)</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Volume 12</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Pages 335-340</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Zhou, Wang; Zhang, Lining; Chen, Lin; Xu, Yiwen; Wu, Wen; He, Jin</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 11</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages: 11006-11010</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 99 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="99" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 7</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Rachida Bensegueni, Saida Latreche</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Conference: Mathematical Science and Applications, </B></I><I>December 26-31, 2012, </I><I><B>Abu Dhabi University, </B></I><I>Abu Dhabi, United Arab Emirates</I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="99" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=3 HEIGHT= 49 WIDTH="45"><div> <B>2009</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> B. Subrahmanyam and M. Jagadesh Kumar , "Recessed Source Concept in Nanoscale Vertical Surrounding Gate (VSG) MOSFETs for Controlling Short-channel Effects," <I><B>Physica E: Low-dimensional Systems and Nanostructures, </B></I>vol.41<I><B>, </B></I>pp. 671-676, February <B>2009.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Munawar A. Riyadi, Ismail Saad and Razali Ismail</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> December 2010</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Journal</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 41, Issue 12</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 827-833 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP><NOBR><div> Li, C., Zhuang, Y., Han, R. </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Journal</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 42, Issue 2</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 341-346 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Pujarini Ghosh, Subhasis Haldar, R.S Gupta, Mridula Gupta</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Journal</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.43</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.17-24</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 49 WIDTH="45"><div> <B>2009</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> Himanshu Batwani, Mayank Gaur and M. Jagadesh Kumar, "Analytical Drain Current Model for Nanoscale Strained-Si/SiGe MOSFETs," <I><B>COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering</B></I>, Vol.28, pp.353-371, February <B>2009.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Liu, H.-X., Yin, X.-K., Liu, B.-J., Hao, Y. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> December 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Wuli Xuebao/Acta Physica Sinica</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 59 (12)</div> </tD> <tD VALIGN=TOP><NOBR><div> pp. 8877-8882</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> R. Dutta, S. Kundu</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>CODEC 2012 - 5th International Conference on Computers and Devices for Communication</B></I><B>, </B></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> art. no. 6509245</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=12 HEIGHT= 49 WIDTH="45"><div> <B>2009</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> Sneh Saurabh and M. Jagadesh Kumar, "Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor (TFET): Theoretical Investigation and Analysis," <I><B>Japanese Journal of Applied Physics,</B></I> Vol.48, paper no. 064503, June <B>2009.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP><NOBR><div> Hui-WenCheng, Yiming Li </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> <bR> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICs</B></I></div> <div> <I><B>Special Issue: Part 2</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 49 Issue: 4</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 04DC09</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP><NOBR><div> Hui-Wen Cheng;   Yiming Li;  </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B> </B></I><I><B> 2010 International ymposium on </B></I><I><B>Next-Generation Electronics (ISNE),</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.32-35</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Yee-Chia Yeo, Genquan Han, Yue Yang, and Pengfei Guo</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> Oct 10-15, 2010</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <I><B>218th ECS Meeting Las Vegas, NV  SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices Editor(s): D. Harame, J. Boquet, M. Östling, Y. Yeo, G. Masini, M. Caymax, T. Krishnamohan, B. Tillack, S. Bedell, S. Miyazaki, A. Reznicek, S. Koester</B></I></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sangiorgi, E., Braccioli, M. and Fiegna, C.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <I><B>Simulation of Self-Heating Effects in Different SOI MOS Architectures, in Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy (eds S. Luryi, J. Xu and A. Zaslavsky),</B></I></div> <div> <I><B>John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470649343.  chapter:12</B></I></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Grützmacher, D., Schäpers, T., Mantl, S., Feste, S., Zhao, Q. T., Hardtdegen, H.,</div> <div> Calarco, R., Lepsa, M. and Demarina, N.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <I><B>Nanowires: Technology, Physics and Perspectives, in Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy (eds S. Luryi, J. Xu and A. Zaslavsky), John Wiley & Sons, Inc., Hoboken, NJ, USA. doi: 10.1002/9780470649343. chapter: 13</B></I></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jhaveri, R.; Nagavarapu, V.; Woo, J.C.S.; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Transactions on Electron Devices </B></I></div> <bR> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 58 , Issue: 1</div> </tD> <tD VALIGN=TOP><NOBR><div> Page(s): 80 - 86 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 7</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Virani, Hasanali G.; Gundapaneni, Suresh; Kottantharayil, Anil</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICSPart 2 Sp. Iss. SI APR 2011 </B></I> </div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 50 (4):</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Art. No. 04DC04 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 8</div> </tD> <tD VALIGN=TOP WIDTH="161"><div>  Bahniman Ghosh, Rahul Mishra</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP COLSPAN=3><NOBR><div> <I><B>http://arxiv.org/ftp/arxiv/papers/1105/1105.4941.pdf</B></I></div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 9</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Mori, Takahiro, Yasuda, Tetsuji, Maeda, Tatsuro, Mizubayashi, Wataru, O'uchi, Shin-ichi, Liu, Yongxun, Sakamoto, Kunihiro, Masahara, Meishoku, Ota, Hiroyuki</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS</B></I>  Special Issue: Part 2 Sp. Iss. SI Article Number: 06GF14 Part: </div> <bR> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 50 Issue: 6</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 06GF14 </div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 10</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Han, Genquan; Guo, Pengfei; Yang, Yue; Fan, Lu; Yee, Ye Sheng; Zhan, Chunlei; Yeo, Yee-Chia </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Japanese Journal of Applied Physics</B></I></div> <bR> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 50, Issue 4,</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 04DJ07-04DJ07-4</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 11</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Viranjay M. Srivastavaa,  K.S. Yadavb, G. Singh</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Journal</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.42</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages 1124-1135</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 65 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 12</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kang, In Man; Jang, Jung-Shik; Choi, Woo Young</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Japanese Journal of Applied Physics</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 50, Issue 12</div> <bR> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 124301-124301-4</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 13</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Bahniman Ghosh, Rahul Mishra, M. W. Akram</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Nano Devices, Sensors and Systems (IJ-Nano)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> <I><B>Vol. 1, No. 1</B></I></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> <I><B>pp. 1-11</B></I></div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 14</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Poornendu Chaturvedi and Nitin Goyal</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>8th International Caribbean Conference on Devices, Circuts and Systems (ICCDCS)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> <I><B>pp:1-4</B></I></div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 34 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 15</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Lee, Jae Sung; Choi, Woo Young; Kang, In Man</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> <I><B>Vol.51, Issue:6</B></I></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 06FE03</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 82 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 16</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Low, Kain Lu; Zhan, Chunlei; Han, Genquan; Yang, Yue; Goh, Kian-Hui; Guo, Pengfei; Toh, Eng-Huat; Yeo, Yee-Chia</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Japanese Journal of Applied Physics</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> <I><B>Volume 51, Issue 2</B></I></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 02BC04-02BC04-6</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 103 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="103" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 17</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Meisam Rahmani<FONT SIZE="2" COLOR="#0000FF" FACE="Arial" >1</FONT>, Mohammad Taghi Ahmadi, Hediyeh Karimi Feiz Abadi, Mehdi Saeidmanesh, Elnaz Akbari and Razali Ismail</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Nanoscale Research Letters</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.8</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> p.55</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=8 HEIGHT= 82 WIDTH="45"><div> <B>2008</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> M. Jagadesh Kumar, M. A. Reed, G. A. J. Amaratunga, G. M. Cohen, D. B. Janes, C. M. Lieber, M. Meyyappan, L.-E. Wernersson, K. L. Wang, R. S. Chau, T. I. Kamins, M. Lundstrom, B. Yu, and C. Zhou, "Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology," <I><B>IEEE Transactions on Electron Devices</B></I>, Vol. 55, pp.2813-2819, November 2008 and also in <I><B>IEEE Transactions on Nanotechnology</B></I>, Vol. 7, pp.643-650, November <B>2008.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> International Technology Roadmap for Semiconductors</div> </tD> <tD VALIGN=TOP COLSPAN=4 WIDTH="412"><div> 2009 Edition </div> <div> <FONT SIZE="3" COLOR="#000000" FACE="Arial" >Emerging Research Materials </FONT><U>http://www.itrs.net/links/2009ITRS/2009Chapters_2009T</U><U>ab</U><U>les/2009_ERM.doc</U></div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chee Shin Koong, Ganesh Samudra, Gengchiau Liang</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICs</B></I></div> <div> <I><B>Special Issue: Part 2</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 49 Issue: 4</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 04DN07</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Yong-Bin Kim</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> June 25, 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 11, No. 3</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 93-105</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP><NOBR><div> Zekentes, K., Rogdakis, K. </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Journal of Physics D: Applied Physics</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 44 (13)</div> </tD> <tD VALIGN=TOP><NOBR><div> art. no. 133001</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Authors: KOONG CHEE SHIN Supervisor: LIANG GENGCHIAU </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> Department: ELECTRICAL & COMPUTER ENGINEERING Master's Thesis National University of Singapore </div> <div> http://scholarbank.nus.edu.sg/handle/10635/17711</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chee Shin Koong and Gengchiau Liang</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> Solid State Circuits Technologies, Book edited by: Jacobus W. Swart</div> </tD> <tD VALIGN=TOP><NOBR><div> Chapter 10</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.203-213</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 7</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, M.-F., Cao, W., Huang, D.M., Shen, C., Cheng, S.Q., Yao, C.J., Yu, H.Y. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>ECS Transactions</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Vol.35 (4)</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div>  pp. 383-401</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 8</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Naveen Narayan Jagadish,  Supervisor:Dr. Theda Daniels-Race</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP COLSPAN=3><NOBR><div> MS Thesis, Louisiana State University</div> <div> <A HREF="http://etd.lsu.edu/docs/available/etd-12192011-172227/" TARGET="_top" TITLE="http://etd.lsu.edu/docs/available/etd-12"><U>http://etd.lsu.edu/docs/available/etd-12192011-172227/</U></A></div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 34 WIDTH="45"><div> <B>2008</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> M. Jagadesh Kumar, "Being wary of plagiarism," <I><B>IETE Technical Review,</B></I> Vol.25 (5), pp.231-233, September-October <B>2008.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Lakhtakia Akhlesh</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Journal of Nanophotonics</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.6</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 069901 </div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=5 HEIGHT= 34 WIDTH="45"><div> <B>2008</B></div> </tD> <tD VALIGN=TOP ROWSPAN=2 COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> Raghavendra S. Saxena and M. Jagadesh Kumar “A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis,” <I><B>IEEE Trans. on Electron Devices,</B></I> Vol.55, pp.3229-3304, November <B>2008.</B></div> </tD> </tR> <tR> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP><NOBR><div> X.X. Wei, B.W. Chen, Y. Li</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> December 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Mechanical Sciences</B></I></div> <div> journal homepage: <FONT SIZE="1" COLOR="#000000" FACE="Arial" >www.elsevier.com/locate/ijmecsci</FONT></div> </tD> <tD VALIGN=TOP><NOBR><div> Vol.52 (12)</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> pp. 1671-1681</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Wang, Y., Hu, H.-F., Cheng, C.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Reliability</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> 51 (2)</div> <bR> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 376-380</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sun, S., Yuan, J.-S., Shen, Z.J. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Transactions on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 58 (5)</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> art. no. 5739110, pp. 1517-1522</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 49 WIDTH="45"><div> <B>2008</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> Tarun Vir Singh and M. Jagadesh Kumar, "Effect of Ge Mole Fraction on the Formation of Conduction Path in Cylindrical Strained-Silicon-on-SiGe MOSFETs," <I><B>Superlattices and Microstructures</B></I>, Vol.44, Issue 1, pp. 79-85, July <B>2008</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sharma, Abhishek A.; Shelar, Rohan; Kulkarni, Rishkul; Shenoy, Apeksha; Kalantri, Pranit; Potnis, Tanmay; Limaye, Apurva; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Issue Date: 8-11 Feb. 2011 </div> </tD> <tD VALIGN=TOP><NOBR><div> page(s): 1 - 3</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><div> <B>2008</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> Vijay Sai Patnaik, Ankit Gheedia and M. Jagadesh Kumar, “3D Simulation of Nanowire FETs using Quantum Models,”  <I><B>Simulation Standard - A Journal for Process and Device Engineers</B></I>, Vol. 18, No.3, pp.6-12, July-Sept <B>2008. </B></div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 99 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="99" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Rachida Bensegueni, Saida Latreche</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <B>International Conference: Mathematical Science and Applications, </B>December 26-31, 2012 <B>Abu Dhabi University </B>Abu Dhabi, United Arab Emirates</div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="99" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 82 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> C. Mukherjee and C. K. Maiti</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <B>Silicon Nanowire FinFETs, Nanowires - Recent Advances, Prof. Xihong Peng (Ed.), ISBN: 978-953-51-0898-6, InTech, DOI: 10.5772/52591. Available from: http://www.intechopen.com/books/nanowires-recent-advances/silicon-nanowire-finfets</B></div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=13 HEIGHT= 34 WIDTH="45"><div> <B>2008</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> M. Jagadesh Kumar and M. Siva, “The Ground Plane in Buried Oxide for Controlling Short-Channel Effects in Nanoscale SOI MOSFETs,” <I><B>IEEE Trans. on Electron Devices,</B></I> Vol.55, pp.1554-1557, June <B>2008. </B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Loan, Sajad A.; Qureshi, S.; Iyer, S. Sundar Kumar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 11-13 Feb. 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Spanish Conference on Electron Devices, 2009. CDE 2009. </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.77 - 80</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sajad A. Loan,S. Qureshi, and S. Sundar Kumar Iyer</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> MARCH 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> VOL. 57, NO. 3</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.671-680</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Khani Parashkoh, Mohsen; Hosseini, Seyed Ebrahim; Abaspur Kazerouni, Iman; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Electrical Engineering (ICEE), 2010 18th Iranian Conference on </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Page(s): 372 - 376 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Saremi, M., Ebrahimi, B., Kusha, A.A., Saremi, M. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> <bR> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> art. no. 5548155, pp. 66-69</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Yang, Y., Liu, X., Du, G., Han, R. </div> </tD> <tD VALIGN=TOP><NOBR><div> June 2010</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>15th Silicon Nanoelectronics Workshop,</B></I> SNW 2010; Honolulu, HI; 13 June 2010 through 14 June 2010</div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Article number 5562559 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Woo, S. -H.; Kang, H.; Park, K.; Jung, S. -O. </div> </tD> <tD VALIGN=TOP><NOBR><div> NOV 2010</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IET CIRCUITS DEVICES & SYSTEMS </B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> vol.4 (6): </div> <bR> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> pp.503-513 </div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 7</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Saremi, M., Ebrahimi, B., Afzali-Kusha, A.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> art. no. 5713733</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 8</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li Bin, Liu Hongxia, Li Jin Yuan Bo and Cao Lei</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Journal of Semiconductors </B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.32, No. 3</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> 034001</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 9</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Yang, Yunxiang; Du, Gang; Han, Ruqi; Liu, Xiaoyan</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS </B></I></div> <div> <I><B>Part 2 Sp. Iss. SI APR 2011</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 50 (4): </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Art. No. 04DC11 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 10</div> </tD> <tD VALIGN=TOP><NOBR><div> Singh, A., Chatterjee, A.K.</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings of the International Conference on Nanoscience, Engineering and Technology, ICONSET 2011 </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Art. no. 6167950 , pp. 187-189</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 11</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Saremi, M., Afzali-Kusha, A., Mohammadi, S.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronic Engineering</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.95</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 74-82</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 12</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, B., Chen, A.-S., Liu, H.-X., Wen, C., Wei, L., Tang, J.-L.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Zhejiang Daxue Xuebao (Gongxue Ban)/Journal of Zhejiang University (Engineering Science)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 47, Issue 1</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages 77-82+187</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 49 WIDTH="45"><div> <B>2008</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> Pradeep Agarwal, Govind Saraswat and M. Jagadesh Kumar, "Compact Surface Potential Model for FD SOI MOSFET Considering Substrate Depletion Region," <I><B>IEEE Trans. on Electron Devices,</B></I> Vol.55, pp.789-795, March <B>2008. </B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> El Husseini, J., Martinez, F., Bawedin, M., Valenza, M., Ritzenthaler, R., Lime, F., Iñiguez, B. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>12th International Conference on Ultimate Integration on Silicon, ULIS 2011</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> art. no. 5757972, pp. 134-137. </div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 34 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ooi Chek Yee, Lim Soo King, and Aissa Boudjella </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JOURNAL OF COMPUTER SCIENCE AND ENGINEERING</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.10</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-6</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> RAHUL PANDEY and ALOKE K. DUTTA</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> VOL.11, NO.4</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.262-271</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 34 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kim, K.S., Cho, I.H</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Japanese Journal of Applied Physics</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 51 (8 PART 1)</div> </tD> <tD VALIGN=TOP><NOBR><div> art. no. 084302</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kamrul Hassan,  Manan Chowdhury,  Mohammad Atif Bin Shafi,  Md. Takdirul Islam</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Modern Engineering Research (IJMER)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.3</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp-652-658</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 49 WIDTH="45"><div> <B>2007</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> Vivek Venkataraman, Susheel Nawal and M. Jagadesh Kumar, "Analytical Drain Current Model of Nanoscale Strained-Si/SiGe MOSFETs for Circuit Simulation," <I><B>Proceedings of the </B></I>20th<I><B> International Conference on VLSI Design, </B></I>pp.189-194, January <B>2007.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sheu, CJ </div> </tD> <tD VALIGN=TOP><NOBR><div> NOV 2008 </div> <bR> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol: 47 Issue: 11 </div> </tD> <tD VALIGN=TOP><NOBR><div> Pages: 8248</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari, S. Jit</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Superlattices and Microstructures</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.58</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-10</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=7 HEIGHT= 34 WIDTH="45"><div> <B>2007</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> <FONT SIZE="2" COLOR="#CC0033" FACE="Arial" ><B> </B></FONT>M. Jagadesh Kumar <B>(Invited)</B>, "Molecular Diodes and Applications," <I><B>Recent Patents on Nanotechnology, </B></I> Vol.1,  No.1, pp.51-57,  February <B>2007.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> He, H., Pandey, R., Karna, S.P.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 17 December 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Nanotechnology</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Volume 19</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> Article number 505203</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP><NOBR><div> H He, R Pandey, SP Karna </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Arxiv preprint arXiv:0809.3796, 2008 - arxiv.org</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> 0809.3796</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Wijewardane, S.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> August 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Solar Energy</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Volume 83</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> Pages 1379-1389</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Krishna V. Singh, Miroslav Penchev, Xiaoye Jing, Alfredo A. Martinez–Morales, Cengiz S. Ozkan and Mihri Ozkan</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> March 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>New Trends in Nanotechnology and Fractional Calculus Applications 10.1007/978-90-481-3293-5_1</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> BOOK</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages 3-15</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Manas Ranjan Pradhan, E.G.Rajan</div> </tD> <tD VALIGN=TOP><NOBR><div> MAY 2010</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> <I><B>JOURNAL OF COMPUTING</B></I></div> <div> www.journalofcomputing.org </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> VOL.2, ISSUE 5</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.93-100</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> El-Hendawy, M.M., El-Nahas, A.M., Awad, M.K. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> December 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Journal of Physical Chemistry C </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 114, Issue 49</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages 21728-21735 </div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 65 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 7</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Merkel, Cory</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP COLSPAN=2 WIDTH="253"><div> <I><B>PhD Thesis: "Thermal profiling in CMOS/memristor hybrid architectures".  </B></I></div> <div> <I><B>Rochester Institute of Technology</B></I></div> <div> <I><B>https://ritdml.rit.edu/handle/1850/14380</B></I></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> p.79</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 8</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Mehdi Ghasemi, Mohammad Hossein Moaiyeri and Keivan Navi</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of  VLSI design & Communication Systems (VLSICS)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> <I><B>Vol.2, No.4</B></I></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-13</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 34 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 9</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Deep Kamal Kaur Randhawa </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Computer Applications </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> <I><B>Vol.49</B></I></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.17-21</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 10</div> </tD> <tD VALIGN=TOP><NOBR><div> Prakash, Somani R.</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>RESEARCH JOURNAL OF CHEMISTRY AND ENVIRONMENT</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> <I><B>Vol.17</B></I></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-3</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=3 HEIGHT= 49 WIDTH="45"><div> <B>2007</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar, Vivek Venkataraman and Susheel Nawal, "Impact of Strain or Ge content on the Threshold Voltage of Nanoscale Strained-Si/SiGe Bulk MOSFETs," <I><B>IEEE Trans. on Device and Materials Reliability,</B></I> Vol.7, pp.181-187, March <B>2007.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> F. Rochette, X. Garros, G. Reimbold, F. Andrieu, M. Cassé, M. Mouis, G. Ghibaudo, F. Boulanger</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> JUL-SEP 2009 </div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronic Engineering</B></I></div> <bR> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 86</div> <bR> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages: 1897-1900 </div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> X. Garros,  F. Rochette, F. Andrieu, S. Baudot, G. Reimbold, C. Aulnette, N. Daval, F. Boulanger  </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> JUN 1 2009    </div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JOURNAL OF APPLIED PHYSICS    </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 105    Issue: 11  </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 114508    </div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Siew, Kang Eng; Heong, Yau Wei; Anwar, Sohail; Ismail, Razali</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Journal of Computational and Theoretical Nanoscience</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 9, Number 3</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> 441-447(7)</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 34 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> K. 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Jagadesh Kumar, "Compact Analytical Threshold Voltage Model of Nanoscale Fully-depleted Strained-silicon on Silicon-germanium-on-insulator (SGOI) MOSFETs,"  <I><B>IEEE Trans. on Electron Devices,</B></I> Vol.54, pp.554-562, March  <B>2007.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Hamdy Mohamde Abd El Hamid</div> <div> ISBN: 978-84-690-8295-9</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Department of Electronic, Electrical and Automatic Engineering</B></I></div> <div> <I><B>UNIVERSITAT ROVIRA I VIRGILI  Tarragona-Spain</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> <B>Ph D Thesis</B></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> p.229</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>2</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> M. Popadic, G. Lorito, L.K.Nanver</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 11-14 May 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>26th International conference on Microelectronics, MIEL 2008</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.155-158</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>3</B></div> </tD> <tD VALIGN=TOP><NOBR><div> XIE Meng-xian, GU Ni-na</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Microelectronics</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> <B>38(1)</B></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-4</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>4</B></div> </tD> <tD VALIGN=TOP><NOBR><div> YOUN SUNG CHOI</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2008</div> </tD> <tD VALIGN=TOP COLSPAN=3><NOBR><div> <I><B>PhD Thesis, University of Florida</B></I></div> <div> <I><B>http://etd.fcla.edu/UF/UFE0022864/choi_y.pdf</B></I></div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>5</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> M. Popadic, G. Lorito, L.K.Nanver</div> </tD> <tD VALIGN=TOP><NOBR><div> Jan. 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Trans. on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div>  Vol.56</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.116-125</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>6</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> B. Svilicica, V. Jovanovicb and T. Suligojb</div> </tD> <tD VALIGN=TOP><NOBR><div> May 2009</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> <I><B>Solid-State Electronics</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.53</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.540-547</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>7</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Capellini G, Ciasca G, De Seta M, Notargiacomo A, Evangelisti F, Nardone M</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> MAY 1 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JOURNAL OF APPLIED PHYSICS    </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 105    Issue: 9 </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article</div> <div> Number: 093525</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>8</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Hongxia Liu, Bin Li, Jin Li and Bo Yuan</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010 </div> <bR> <bR> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Reliability</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 50 (12)</div> </tD> <tD VALIGN=TOP><NOBR><div> pp. 1942-1950.</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>9</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Svilicic, B.; Jovanovic, V.; Suligoj, T.; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>MIPRO, 2010 Proceedings of the 33rd International Convention </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="57" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s): 43 - 47 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>10</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li Jin, Liu Hongxia, Li Bin, Cao Lei, and Yuan Bo</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> August 2010</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Journal of Semiconductors</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 31, No. 8</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp:084008-1 to 084008-6</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>11</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div>  Li, J., Liu, H.-X., Li, B., Cao, L., Yuan, B.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Chin. Phys. B</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.19 </div> <div> (10), </div> </tD> <tD VALIGN=TOP><NOBR><div> art. no. 107301</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>12</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> L Jin, L Hong-Xia, L Bin, C Lei, Y Bo</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Chin. Phys. B</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 19, No. 10 </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No.107302 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>13</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Liu Hong-Xia, Li Bin, Li Jin, Yuan Bo, and Hao Yue</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Chin. Phys. 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Liu Hong-Xia ; Wang Guan-Yu</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>ACTA PHYSICA SINICA</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 61   Issue: 1</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 017105</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>22</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Siew, Kang Eng; Heong, Yau Wei; Anwar, Sohail; Ismail, Razali</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Journal of Computational and Theoretical Nanoscience</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 9, Number 3</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> 441-447(7)</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>23</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Mirgender Kumar, Sarvesh Dubey, Satyabrata Jit, Abirmoya Santra, Pramod Kumar Tiwari</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>ICQNM 2012 : The Sixth International Conference on Quantum, Nano and Micro Technologies</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp:69-73</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>24</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kumar, M., Dubey, S., Jit, S., Tiwari, P.K.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Conference on Communications, Devices and Intelligent Systems, CODIS 2012;Kolkata;</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Pages 449-452</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>25</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kumar, M., Dubey, S., Jit, S., Tiwari, P.K.</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>CODEC 2012 - 5th International Conference on Computers and Devices for Communication</B></I><B>, </B></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> art. no. 6509255</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>26</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Razali Bin Ismail, Mohammad Tahgi Ahmedi and Sohail Anwar (Eds)</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Advanced Nanoelectronics</B></I></div> <div> <I><B>CRC Press, </B></I></div> <div> <I><B>ISBN 978-1-4398-5680-2</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> BOOK</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>27</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, B., Chen, A.-S., Liu, H.-X., Wen, C., Wei, L., Tang, J.-L.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Zhejiang Daxue Xuebao (Gongxue Ban)/Journal of Zhejiang University (Engineering Science)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 47, Issue 1</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages 77-82+187</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>28</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari, S. Jit</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Superlattices and Microstructures</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.58</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-10</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 49 WIDTH="45"><div> <B>2007</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> M. Jagadesh Kumar, Vivek Venkataraman and Susheel Nawal,"Comprehensive Approach to Modeling Threshold Voltage of Nanoscale Strained Silicon SOI MOSFETs," <I><B>Journal of Computational Electronics,</B></I> Vol.6, No.4, pp.439-444, December <B>2007</B><I><B>.</B></I></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Wang, G.-Y., Zhang, H.-M., Wang, X.-Y., Wu, T.-F., Wang, B. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Wuli Xuebao/Acta Physica Sinica</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Vol.60 (7)</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> art. no. 077106 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 82 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kumar, M., Dubey, S., Jit, S., Tiwari, P.K.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings of the 2012 International Conference on Communications, Devices and Intelligent Systems, CODIS 2012</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Pages 449-452</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 34 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="34" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kumar, M., Dubey, S., Tiwari, P.K., Jit, S. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Journal of Computational Electronics</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Vol.12 (1)</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div>  pp. 20-28</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 49 WIDTH="45"><div> <B>2007</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> M. Jagadesh Kumar, Himanshu Batwani and Mayank Gaur (Invited), "Approaches to Nanoscale MOSFET Compact Modeling using Surface Potential Based Models," <I><B>14th International Workshop on the Physics of Semiconductor Devices</B></I>, December <B>2007.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Viktor Denisenkor</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Components and Technologies</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> vol.10</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.153-158</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=3 HEIGHT= 16 WIDTH="45"><div> <B>2006</B></div> </tD> <tD VALIGN=TOP ROWSPAN=2 COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> M. Jagadesh Kumar and Harsh Bahl, "New Silicon-Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) Without PN Junction," <I><B>Proceedings of the IEEE INDICON</B></I><B>,</B> pp.1-3, 15-17 September <B>2006, </B>New Delhi, India.</div> </tD> </tR> <tR> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Fortunato Pezzimenti, Francesco Della Corte</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Page(s): 1129 - 1134 </div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=12 HEIGHT= 49 WIDTH="45"><div> <B>2006</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar, Vivek Venkataraman and Susheel Nawal, "A Simple Analytical Threshold Voltage Model of Nanoscale Fully Depleted Single-Layer Strained-Silicon-on-Insulator (SSOI) MOSFETs,"  <I><B>IEEE Trans. on Electron Devices</B></I>,  Vol.53, pp.2500-2506, October <B>2006.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Karl Bertling, A. D. Raki, Yew-Tong Yeow</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 6-8 Dec. 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.283-285</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>2</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> WANG Jin, LIU Hong-xia; LUAN Su-zhen</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007 </div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>MICROELECTRONICS</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.37 No.6</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.838-841</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>3</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Tinoco JC, Garcia R, Niguez BI, Cerdeira A, Estrada M </div> </tD> <tD VALIGN=TOP><NOBR><div> MAR 2008</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>SEMICONDUCTOR SCIENCE AND TECHNOLOGY </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.23 </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 035017 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Bhattacherjee, S., Biswas, A., Basu, P.K. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Codec - 2009 - 4th International Conference on Computers and Devices for Communication </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Article number 5407106 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li Jin, Liu Hongxia, Li Bin, Cao Lei, and Yuan Bo</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> August 2010</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Journal of Semiconductors</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 31, No. 8</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp:084008-1 to 084008-6</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP WIDTH="161"><div>  Li, J., Liu, H.-X., Li, B., Cao, L., Yuan, B.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Chin. Phys. B</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Vol.19 (10) </div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> art. no. 107301</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 7</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> L Jin, L Hong-Xia, L Bin, C Lei, Y Bo</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Chin. Phys. B</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 19, No. 10 </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No.107302 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 8</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Liu Hong-Xia, Li Jin, Li Bin, Cao Lei, and Yuan Bo</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Chin. Phys. B</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 20, No. 1</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No.017301 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 9</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ooi Chek Yee, Aissa Boudjella and Lim Soo King</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JOURNAL OF COMPUTER SCIENCE AND ENGINEERING</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> VOLUME 8, ISSUE 2</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.33-36</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 10</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li Jin, Liu Hongxia, Yuan Bo, Cao Lei and Li Bin</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Journal of Semiconductors </B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 32 Number 4</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No. 044005</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 11</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> S. 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Jagadesh Kumar, Vivek Venkataraman and Sumeet Kumar Gupta, "A New Grounded Lamination Gate (GLG) for Diminished Fringe Capacitance Effects in High-K Gate Dielectric MOSFETs,"  <I><B>IEEE Trans. on Electron Devices,</B></I> Vol.53, pp.2578-2581, October <B>2006.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jen-Yuan Cheng and Jenn-Gwo Hwu</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> <I><B>VOL. 59, NO. 3</B></I></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp:565-572</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 49 WIDTH="45"><div> <B>2006</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> Sukhendu Deb Roy and M. Jagadesh Kumar, "Enhanced Breakdown Voltage, Diminished Quasi-saturation and Self-heating Effects in SOI Thin-Film Bipolar Transistors for Improved Reliability: A TCAD Simulation Study," <I><B>IEEE Trans. on Device and Materials Reliability, </B></I>Vol.6, pp.306-314, June<I><B> </B></I><B>2006.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP><NOBR><div> Zhang, K., Cheng, M.-C. </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> November 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Trans. on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Vol.57 (11)</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> art. no. 5607259, pp. 2838-2847</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=8 HEIGHT= 49 WIDTH="45"><div> <B>2006</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> Ali. A. Orouji and M. Jagadesh Kumar, "Leakage Current Reduction Techniques in Poly-Si TFTs for Active Matrix Liquid Crystal Displays: A Comprehensive Study," <I><B>IEEE Trans. on Device and Materials Reliability, </B></I>Vol.6, pp.315-325, <I><B> </B></I>June<I><B> </B></I><B>2006.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP><NOBR><div> Eng, Y.-C., Lin, J.-T.</div> <bR> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Journal of Applied Physics</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 101, Issue 10</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article number 104501</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>2</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> W. J.Wu, R. H. Yao, S. H. Li, Y. F. Hu, W. L. Deng, and X. R. 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Sundar Kumar Iyer</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> VOL. 57, NO. 3</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.671-680</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ganesh C Patil and S Qureshi </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Semiconductor Science and Technology</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 26 Number 8</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> 085002 </div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sarika Bukkawar, Nisha Sarwade</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Scientific & Engineering Research (IJSER)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 3, Issue 5</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp:1-4</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 7</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> SARIKA BUKKAWAR, NISHA SARWADE</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Engineering Science and Technology (IJEST)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 4 </div> <div> No.05</div> </tD> <tD VALIGN=TOP><NOBR><div> pp:2300-2306</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=5 HEIGHT= 49 WIDTH="45"><div> <B>2006</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> Ali A. 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Jagadesh Kumar, Sumeet Kumar Gupta and Vivek Venkataraman,"Compact Modeling of Parasitic Internal Fringe Capacitance Effects on the Threshold Voltage of High-K Gate Dielectric Nanoscale SOI MOSFETs,"  <I><B>IEEE Trans. on Electron Devices</B></I>, Vol.53, pp.706-711, April <B>2006</B>.</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> J.P. Xu, F. Ji, P.T. Lai and J.G. Guan</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> February 2008</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Reliability</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.48</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> PP.181-186</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>2</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Steve Hall, O. Buiu, I. Z. Mitrovic, Y. Lu and W. M. 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Xu, P.T. Lai, J.G. Guan</div> </tD> <tD VALIGN=TOP><NOBR><div> May 2008</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Reliability</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.48</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.693-697</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>5</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Yasuhisa Omura, Shunsuke Nakano, Osanori Hayashi</div> </tD> <tD VALIGN=TOP><NOBR><div> July 2011</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Transactions on Nanotechnology</B></I> </div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.10, Issue 4,</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article no. 5559456, pp.715-726<B> </B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>6</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Shunsuke Nakano, Osanori Hayashi, Yasuhisa Omura</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Technology Reports of Kansai University</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.53</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.21-38</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>7</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Thabet, A.;   Atef, M.;   Mobarak, Y. A.;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Power Electronics and Applications (EPE 2011), Proceedings of the 2011-14th European Conference on</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-3</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>8</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li Cong, Zhuang Yi-Qi, Zhang Li and Bao Jun-Lin</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Chinese Phys. B</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 21 Number 4</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No. 048501</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=18 HEIGHT= 1 WIDTH="45"><div> <B>2006</B></div> </tD> <tD VALIGN=TOP ROWSPAN=2 COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar, Ali. A. Orouji and Harshit Dhakad, "A New Dual Material Surrounding-Gate Nanoscale MOSFET: Analytical Threshold Voltage Model,"<B> </B> <I><B>IEEE Trans. on Electron Devices</B></I>, Vol.53, pp.920-923, April <B>2006.</B></div> </tD> </tR> <tR> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP ROWSPAN=2><NOBR><div> Li, Y., Hwang, C.-H.</div> </NOBR></tD> <tD VALIGN=TOP ROWSPAN=2 WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP ROWSPAN=2 WIDTH="187"><div> <I><B>NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings 1</B></I></div> </tD> <tD VALIGN=TOP ROWSPAN=2 WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="1" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP ROWSPAN=2><NOBR><div> pp. 193-196 </div> </NOBR></tD> </tR> <tR> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 WIDTH="46"><div> <B>2</B></div> </tD> <tD VALIGN=TOP ROWSPAN=2><NOBR><div> Hsin-Kai Wang </div> <div> Supervisor: T.K. Chiang</div> </NOBR></tD> <tD VALIGN=TOP ROWSPAN=2 WIDTH="61"><div> <B>MS Thesis</B></div> <div> Date of Submission 2008-07-23</div> </tD> <tD VALIGN=TOP ROWSPAN=2 COLSPAN=3 WIDTH="348"><div> <U>http://etd.lib.stut.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0407109-183709-685</U><FONT SIZE="2" COLOR="#000000" FACE="Arial" > </FONT></div> <div> Study of Subthreshold Behavior for the Dual-Material Surrounding-Gate MOSFETs</div> </tD> </tR> <tR> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>3</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> N.B. Balamurugan, K. Sankaranarayanan, P. Amutha, and F. Fathima John</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> September 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Journal of Semiconductor Technology and Science</B></I></div> <div> <A HREF="http://www.jsts.org" TARGET="_top" TITLE="http://www.jsts.org"><U><U>http://www.jsts.org</U></U></A></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.8</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.221-226</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>4</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Z. C. Li</div> <bR> </tD> <tD VALIGN=TOP><NOBR><div> NOV 2008</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>CHINESE PHYSICS B</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 17</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.4312-4317</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>5</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Zun-Chao LI </div> </tD> <tD VALIGN=TOP><NOBR><div> Jan 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>CHIN. PHYS. LETT.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 26</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No.018502</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>6</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, Zun-Chao; Zhang, Rui-Zhi; Jiang, Yao-Lin</div> </tD> <tD VALIGN=TOP><NOBR><div> MAR 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 48 (3): </div> </tD> <tD VALIGN=TOP><NOBR><div> Art. No. 034505 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>7</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Yiming Li and Chih-Hong Hwang</div> </tD> <tD VALIGN=TOP><NOBR><div> April 2009</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> <I><B>Semicond. Sci. Technol.</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 24</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No.045004</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>8</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> N.B. Balamurugan, K. Sankaranarayanan,  and F. Fathima John</div> </tD> <tD VALIGN=TOP><NOBR><div> June 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Journal of Semiconductor Technology and Science</B></I></div> <div> <A HREF="http://www.jsts.org" TARGET="_top" TITLE="http://www.jsts.org"><U><U>http://www.jsts.org</U></U></A></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.9</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.110-116</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>9</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Palash Roy; Binit Syamal; Mohankumar, N.; Sarkar, C.K.; </div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 14-16 Dec. 2009 </div> <bR> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>4th International Conference on Computers and Devices for Communication, 2009. CODEC 2009.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s):1 - 4</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>10</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Roy, P.; Syamal, B.; Mohankumar, N.; Sarkar, C.K.; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Conference on Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s): 70 - 73 </div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>11</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> PK Tiwari, S Dubey, M Singh, S Jit </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010 </div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Journal of Applied Physics</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.108</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No.074508</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>12</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ghosh, P., Chaujar, R., Haldar, S., Gupta, R.S., Gupta, M. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> <bR> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings of World Academy of Science, Engineering and Technology</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> VOL.64</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 615-618</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>13</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Aouaj, Abdellah; 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Orouji and M. Jagadesh Kumar, "A New Symmetrical Double Gate Nanoscale MOSFET with Asymmetrical Side Gates for Electrically Induced Source/Drain," <I><B>Microelectronic Engineering,</B></I> Vol.83, pp.409-414, March <B>2006</B> </div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP><NOBR><div> Li, C., Zhuang, Y., Han, R.</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Journal </B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 42, Issue 2</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 341-346 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 49 WIDTH="45"><div> <B>2005</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> Ali A. Orouji and M. Jagadesh Kumar, "The Simulation of a New Asymmetrical Double-Gate Poly-Si TFT with Modified Channel Conduction Mechanism for Highly Reduced OFF-state Leakage Current," <I><B>IEEE Trans. on Device and Materials Reliability, </B></I>Vol.5,  pp.675-682, December <B>2005</B>.</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chou, WY; Lin, ST; Cheng, HL; Tang, FC; Lin, YJ; You, CF; Wang, YW</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> MAY 28 2007</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>APPLIED PHYSICS LETTERS</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> 90 (22)</div> </tD> <tD VALIGN=TOP><NOBR><div> Art. No. 222103</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> <B>2</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Deng Wanling,Huang Junkai</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Optoelectronic Technology</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> 31(3)</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.157~161</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=3 HEIGHT= 49 WIDTH="45"><div> <B>2005</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar and Sukhendu Deb Roy, "A New High Breakdown Voltage Lateral Schottky Collector Bipolar Transistor on SOI: Design and Analysis," <I><B>IEEE Trans. on Electron Devices</B></I>, Vol.52, pp.2496-2501, November <B>2005</B>.</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Zhu, S., Lo, G.Q., Yu, M.B., Kwong, D.L. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2008</div> <bR> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>APPLIED PHYSICS LETTERS</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> 93 (7)</div> </tD> <tD VALIGN=TOP><NOBR><div> art. no. 071108 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>2</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sajad A. Loan, S. Qureshi and S. Sundar Kumar Iyer</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> July 2 - 4, 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings of the World Congress on Engineering </B></I></div> <div> <I><B>WCE 2008, July 2 - 4, 2008, London, U.K.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> <I><B> Vol I</B></I></div> </tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=13 HEIGHT= 49 WIDTH="45"><div> <B>2005</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar and G. V. Reddy, "Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator Metal Oxide Field Effect Transistors due to Induced Back-Gate Step Potential,"  <I><B>Japanese Journal of Applied Physics,</B></I>  Vol.44, No. 9A, pp.6508-6509, September  <B>2005.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>1</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chengxin Lin "<I>Jitter in Oscillators with 1/f Noise sourses and application to True RNG Cryptography"</I></div> </tD> <tD VALIGN=TOP><NOBR><div> Jan 2006</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>PhD Thesis, </B></I></div> <div> <I><B>Dept of Electrical Engg., Worcester Polytechnic Institute, </B></I>Worcester, MA 01609-2280, USA</div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> P.221</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>2</B></div> </tD> <tD VALIGN=TOP><NOBR><div> Mahmood, S.A.; Huda, M.Q</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 19-21 Dec. 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>I</B></I><I><B>nt</B></I><I><B>ernational Conference on Electrical and Computer Engineering, 2006. ICECE '06. </B></I></div> <bR> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> pp.526 - 529</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>3</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Lin, J.-T., Eng, Y.-C., Lee, T.-Y., Lin, K.-C</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> <bR> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings - IEEE International SOI Conference 2007</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Article number 4062893</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 85-87</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>4</B></div> </tD> <tD VALIGN=TOP><NOBR><div> A.A. Orouji and Z. Arefinia</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Physica E: Low-dimensional Systems and Nanostructures</B></I>  <FONT SIZE="1" COLOR="#000000" FACE="Arial" >Available on line</FONT></div> <div> doi:10.1016/j.physe.2008.10.005</div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="60" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="60" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>5</B></div> </tD> <tD VALIGN=TOP><NOBR><div> Arefinia, Z.; Orouji, A.A.; </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Silicon Nanoelectronics Workshop, 2008. SNW 2008.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s): 1 - 2</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>6</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Rupendra Kumar Sharma, Ritesh Gupta, Mridula Gupta and R. S. Gupta</div> </tD> <tD VALIGN=TOP><NOBR><div> June 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.56</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.1284-1291</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>7</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Hu CY, Chen JF, Chen SC, Chang SJ, Lee CP, Lee TH  </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> January 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JOURNAL OF THE ELECTROCHEMICAL SOCIETY    </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 157    </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages: H38-H43    </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>8</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Oubram, O., Gaggero-Sager, L.M., Bassam, A., Luna-Acosta, G.A. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Progress in Electromagnetics Research</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.110 </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 59-80</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>9</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Arefinia, Z.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> March 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Physica E: Low-Dimensional Systems and Nanostructures</B></I> </div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 43, Issue 5</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages 1105-1110 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>10</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> ALOK KUMAR KUSHWAHA</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <I><B>PhD thesis: NATIONAL INSTITUTE OF TECHNOLOGY KURUKSHETRA</B></I></div> <div> <I><B>http://www.nitkkr.ac.in/alok_phd_thesis_ece.pdf</B></I></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> <B>11</B></div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sharma, Rupendra Kumar, Gupta, Mridula, Gupta, R. S.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.58 </div> </tD> <tD VALIGN=TOP><NOBR><div> pp.2936-2943</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 12</div> </tD> <tD VALIGN=TOP><NOBR><div> Thu Trang NGHIEM THI</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> UNIVERSITE PARIS-SUD PhD Thesis</div> <div> <A HREF="http://computational-electronics.ief.u-psud.fr/wp-content/uploads/2013/02/These-Trang.pdf" TARGET="_top" TITLE="http://computational-electronics.ief.u-p"><U><U>http://computational-electronics.ief.u-psud.fr/wp-content/uploads/2013/02/These-Trang.pdf</U></U></A></div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 49 WIDTH="45"><div> <B>2005</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> Ali A. Orouji and M. Jagadesh Kumar, "Shielded Channel-Double Gate (SC-DG) MOSFET: A Novel Device for Reliable Nanoscale CMOS Applications,"  <I><B>IEEE Trans. on Device and Materials Reliability, </B></I>Vol.5, pp.509-514, September  <B>2005</B>.</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Eng, Yi-Chuen   Lin, Jyi-Tsong</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 11-13 July 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>14th International Symposium on  Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.185-188</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=5 HEIGHT= 49 WIDTH="45"><div> <B>2005</B></div> <div> <B> </B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> Ali A. Orouji and M. Jagadesh Kumar, "A New Poly-Si  Triple-Gate Thin Film Transistor (TG-TFT) with Diminished Pseudo-Subthreshold Region: Theoretical Investigation and Analysis,"  <I><B>IEEE Trans. on Electron Devices</B></I>,  Vol.52, pp.1815-1820, August  <B>2005</B>.</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP><NOBR><div> Li, J.; Bansal, A.; Roy, K</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> NOVEMBER 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Trans. on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> <B>Vol.54</B></div> </tD> <tD VALIGN=TOP><NOBR><div> pp.2918-2929</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Navneet Gupta</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> December 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Physica Scripta</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> vol.76 </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.628-633</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Navneet Gupta</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> December 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B> INTERNATIONAL JOURNAL OF MODERN PHYSICS B</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 22 </div> </tD> <tD VALIGN=TOP><NOBR><div> pp.5357-5364</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP><NOBR><div> Jing Li, Kunhyuk Kang, </div> <div> Kaushik Roy</div> <bR> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> JAN 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B> IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 28 </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> p.46</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jyi-Tsong Lin, Yi-Chuen Eng, and Yi-Hsuan Fan</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Transactions on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.59</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.3377-3381</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 49 WIDTH="45"><div> <B>2005</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar and Vinod Parihar, "Enhanced Current Gain in SiC Power BJTs using a novel Surface Accumulation Layer Transistor (SALTran) Concept," <I><B>Microelectronic Engineering</B></I>, Vol.81, pp.90-95, July <B>2005</B>.</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP><NOBR><div> Cha, H.-Y., Sandvik, P.M.</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> July 2008</div> <bR> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Japanese Journal of Applied Physics</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.47, Issue 7 PART 1</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages 5423-5425</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 98 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="98" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jennifer Najjar, Rita Khalil, Paul Akiki and Hadi Y. Kanaan</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>2nd International Conference on </B></I><I><B> Advances in Computational Tools for Engineering Applications (ACTEA)</B></I></div> <bR> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="98" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> <B>Page(s):</B> 225 - 230 </div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=3 HEIGHT= 33 WIDTH="45"><div> <B>2005</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar, Vivek Venkataraman and Sumeet Kumar Gupta, "On the Parasitic Gate Capacitance of Small Geometry MOSFETs,"  <I><B>IEEE Trans. on Electron Devices,</B></I> Vol.52,  pp.1676-1677,  July <B>2005</B>.</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jyi-Tsong Lin; Yi-Chuen Eng; Tai-Yi Lee; Kao-Cheng Lin;</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 15-16 May 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Workshop on Junction Technology, 2006. IWJT '06. </B></I></div> <bR> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> pp.229 - 232</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> G. H. See, S. B. Chiah, X. Zhou, K. Chandrasekaran, W. Shangguan, Z. Zhu,G. H. Lim, S. M. Pandey, M. Cheng,S. Chu, L. -C. Hsia</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.3</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.749-752</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jyi-Tsong Lin, Yi-Chuen Eng, and Po-Hsieh Lin</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Active and Passive Electronic Components</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> vol. 2013</div> <bR> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> Article ID 627873</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=13 HEIGHT= 49 WIDTH="45"><div> <B>2005</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar and Ali A. Orouji, "Two-Dimensional Analytical Threshold Voltage Model of Nanoscale Fully Depleted SOI MOSFET with Electrically Induced Source/Drain Extensions,"  <I><B>IEEE Trans. on Electron Devices</B></I>, Vol.52, pp.1568-1575,  July <B>2005</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jyi-Tsong Lin; Yi-Chuen Eng; Tai-Yi Lee; Kao-Cheng Lin;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 15-16 May 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Workshop on Junction Technology, 2006. IWJT '06. </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> pp.229 - 232</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP><NOBR><div> AJAY KUMAR SINGH.</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>J. of Active and Passive Electronic Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 2</div> </tD> <tD VALIGN=TOP><NOBR><div> pp. 331–349</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Zhang, G.G.; Shao, Z.Z.; Zhou, K.K.</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> March 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Trans. on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> <B>Vol.55</B></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.803-809</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Luan Su-Zhen; Liu Hong-Xia; Jia Ren-Xu; Cai Nai-Qiong</div> </tD> <tD VALIGN=TOP><NOBR><div> JUN 2008</div> <bR> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> <I><B>ACTA PHYSICA SINICA</B></I></div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Vol.57 (6)</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> pp.3807-3812</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Anvarifard MK, Hosseini SE, Armaki MG  </div> </tD> <tD VALIGN=TOP><NOBR><div> OCT 2009  </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS    </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 48    Issue: 10  </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 104501    </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Marie Garcia Bardon, Herc P. 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Baishya</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Computer and Electrical Engineering</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 3, No. 6</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.869-872</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 82 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 15</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Basu, S., Malakar, T.D., Sarkar, S.K., Sarkar, S.K., Islam, N.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings of the International Conference on Nanoscience, Engineering and Technology, ICONSET 2011</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> art. no. 6168012 , pp. 497-499</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 16</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Shan Shan Qin, He Ming Zhang, Hui Yong Hu, Xiao Bo Xu, Xiao Yan Wang</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Applied Mechanics and Materials </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> (Volumes 110 - 116)</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> 3332-3337</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 17</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Wang, H.-K., Wu, S., Chiang, T.-K., Lee, M.-S.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Japanese Journal of Applied Physics</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 51 (5 PART 1)</div> </tD> <tD VALIGN=TOP><NOBR><div> art. no. 054301</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 18</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Santosh Kumar Gupta, S. 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Kushwaha, M.K.Pandey, S. Pandey, A.K.Gupta</div> </tD> <tD VALIGN=TOP><NOBR><div> June 2007</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>J</B></I><I><B>ournal of Semiconductor Technology and Science (www.jsts.org)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.7, No.2</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.110-119</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 8</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chiang, Te-Kuang; Chen, Mei-Li</div> </tD> <tD VALIGN=TOP><NOBR><div> June 2007</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 46 (6A)</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.3283-3290</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 9</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, Zunchao; Jiang, Yaolin; Zhang, Lili;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 3-4 June 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceeding of 2007 International Workshop on </B></I><I><B>Electron Devices and Semiconductor Technology, 2007.  </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="83" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.66 - 69</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 10</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Mei-Li Chen</div> <div> Supervisor: Te-Kuang Chiang</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> Date of submission:2007-07-25</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <I><B>PhD Thesis: </B></I><B>Investigation of Small-Geometrical Behavior on Double-Gate MOSFETs</B></div> <div> <A HREF="http://etd.lib.stut.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0407109-183703-132" TARGET="_top" TITLE="http://etd.lib.stut.edu.tw/ETD-db/ETD-se"><U><U>http://etd.lib.stut.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0407109-183703-132</U></U></A></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 11</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jyi-Tsong Lin, and Yi-Chuen Eng</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> DECEMBER 2007</div> <bR> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Trans. on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> VOL. 54,</div> <bR> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> pp.3238-3244</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 12</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kushwaha A, Pandey MK, Pandey S, Sharma R, Gupta AK</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> Indian Inst Technol, Mumbai, INDIA, DEC 17-20, 2007 </div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007    </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="99" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Pages: 264-267    </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 13</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Zhang, G., Shao, Z., Han, B., Liu, D.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B> Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 28 (9)</div> </tD> <tD VALIGN=TOP><NOBR><div> pp. 1359-1363 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 14</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ali A. 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No.: WO/2008/026859 International Application No.: PCT/KR2007/004111 </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 22</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Te-Kuang Chiang</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> <I>February 2009</I></div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Reliability</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> <I>Vol. 49</I></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> <I>pp.113-119</I></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 23</div> </tD> <tD VALIGN=TOP><NOBR><div> Arefinia, Z., Orouji, A.A</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Feb 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS</B></I> </div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 48 (2)</div> </tD> <tD VALIGN=TOP><NOBR><div> art. no. 024501 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 24</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Rupendra Kumar Sharma, Ritesh Gupta, Mridula Gupta and R. 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Gupta</div> </tD> <tD VALIGN=TOP><NOBR><div> June 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.56</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.1284-1291</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 25</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chiang, T.-K.</div> </tD> <tD VALIGN=TOP><NOBR><div> July 2009</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Reliability</B></I></div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Volume 49</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Pages 693-698</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 26</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, Junsheng; Dai, Yuehua; Chen, Junning; Ke, Daoming;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 24-26 Sept. 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>5th International Conference on Wireless Communications, Networking and Mobile Computing, 2009. WiCom '09</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s):1 - 4 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 27</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Khani Parashkoh, Mohsen; Hosseini, Seyed Ebrahim; Abaspur Kazerouni, Iman; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Electrical Engineering (ICEE), 2010 18th Iranian Conference on </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Page(s): 372 - 376 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 28</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Tiwari, P.K., Dubey, S., Singh, M., Jit, S. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JOURNAL OF APPLIED PHYSICs</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.108 (7), </div> </tD> <tD VALIGN=TOP><NOBR><div> art. no. 074508</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 29</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Djeffal, F., Bentrcia, T., Abdi, M.A., Bendib, T. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Reliability</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> 51 (3)</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 550-555</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 30</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Arefinia, Z.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> March 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Physica E: Low-Dimensional Systems and Nanostructures </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 43, Issue 5</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages 1105-1110 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 31</div> </tD> <tD VALIGN=TOP><NOBR><div> F. Djeffal, and T. Bendiba </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Journal</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> 42 (5)</div> </tD> <tD VALIGN=TOP><NOBR><div> pp. 661-666. </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 32</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> ALOK KUMAR KUSHWAHA</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <I><B>PhD thesis: NATIONAL INSTITUTE OF TECHNOLOGY KURUKSHETRA</B></I></div> <div> <I><B>http://www.nitkkr.ac.in/alok_phd_thesis_ece.pdf</B></I></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 33</div> </tD> <tD VALIGN=TOP><NOBR><div> Gupta, S.K., Baishya, S. </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>ICECT 2011 - 2011 3rd International Conference on Electronics Computer Technology,</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> art. no. 5941732, pp. 429-432.</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 34</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sharma, Rupendra Kumar, Gupta, Mridula, Gupta, R. 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Ji</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>J. Nano- Electron. Phys</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.3</div> </tD> <tD VALIGN=TOP><NOBR><div>  No1, P. 576-58</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 41</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Saptarsi Ghosh, Khomdram Jolson Singh, Sanjay Deb,</div> <div> Subir Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>J. Nano- Electron. Phys</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.3</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> No.1,pp.569-575</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 42</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Santosh Kumar Gupta and S. Baishya</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Computer and Electrical Engineering</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div>  Vol. 3, No. 6</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.869-872</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 43</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Zhou, Wang; Zhang, Lining; Chen, Lin; Xu, Yiwen; Wu, Wen; He, Jin</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 11</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages: 11006-11010</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 82 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 44</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Basu, S., Malakar, T.D., Sarkar, S.K., Sarkar, S.K., Islam, N.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings of the International Conference on Nanoscience, Engineering and Technology, ICONSET 2011</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> art. no. 6168012 , pp. 497-499</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 45</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sanjoy Deb, N.Basanta Singh, Nurul Islam, and Subir Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON NANOTECHNOLOGY</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Pages 472-478</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 46</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> A. Tsormpatzogloua, I. Pappasa, D.H. Tassisa, C.A. Dimitriadisa, G. Ghibaudob</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronic Engineering</B></I></div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Volume 90</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> Pages 9-11</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 47</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Remmouche R. ; Boutaoui N. ; Bouridah H.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>ACTA PHYSICA POLONICA A</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 121   Issue: 1</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages: 190-192 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 48</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ali A. Orouji, , Morteza Rahimian</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Current Applied Physics, 2012</B></I></div> <div> <I><B>http://www.sciencedirect.com/science/article/pii/S15</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> volume 12, issue 5</div> </tD> <tD VALIGN=TOP><NOBR><div> pp. 1366 - 1371</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 49</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Tiwari, P.K., Dubey, S., Singh, K., Jit, S.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Superlattices and Microstructures</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 51, Issue 5,</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 715-724</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 50</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Naha, Sounak; Sarkhel, Saheli; Sarkar, Subir Kumar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>2012 International Conference on Devices, Circuits and Systems (ICDCS)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Page(s): 507 - 510</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 51</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Wang, H.-K., Wu, S., Chiang, T.-K., Lee, M.-S.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Japanese Journal of Applied Physics</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 51 (5 PART 1)</div> </tD> <tD VALIGN=TOP><NOBR><div> art. no. 054301</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 52</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Angsuman Sarkar, Aloke Kumar Das, Swapnadip Deb, Chandan Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Journal</B></I></div> <div> <I><B>Available online 6 July 2012</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.43, No.11</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.873-882</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 53</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Santosh Kumar Gupta, S. Baishya</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Soft Computing and Engineering (IJSCE)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume-2, Issue-2</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.214-221</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 54</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Duo-Han Chang</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <I><B>http://ethesys.nuk.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0612112-140304</B></I></div> <div> Master's Thesis, National Unive3rsity of Kaohsiung, Taiwan</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 68 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="68" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 55</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> T. Bendib, F. Djeffal, T. Bentrcia, D. Arar and N. Lakhdar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings of the World Congress on Engineering 2012 Vol II, WCE 2012, July 4 - 6, 2012, London, U.K</B></I><FONT SIZE="3" COLOR="#000000" FACE="TimesNewRoman" >.</FONT></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="68" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp:1-3</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 56</div> </tD> <tD VALIGN=TOP><NOBR><div> Sharma, R.K., Bucher, M. </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.27-30</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 57</div> </tD> <tD VALIGN=TOP><NOBR><div> Sharma, R.K., Bucher, M.<FONT SIZE="3" COLOR="#000000" FACE="Arial" > </FONT></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Transactions on Nanotechnology</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 11 (5) , art. no. 6256737</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 992-998</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 58</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Bibhas Manna, Saheli Sarkhel, Nurul Islam, S. Sarkar, and Subir Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Transactions on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Find the page numbers</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 59</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> ZOHEIR KORDROSTAMI, M. HOSSEIN SHEIKHI, and ABBAS ZARIFKAR</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Modern Physics B</B></I></div> <div> DOI: 10.1142/S0217979212501962</div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Find the page numbers</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 60</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Saji Joseph, George James T and Vincent Mathew </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Journal of Electron Devices</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.16</div> </tD> <tD VALIGN=TOP><NOBR><div> pp. 1363-1369</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 82 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 61</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Santunu Sarangi, Shiv Bhushan, Gopi Krishna .S, Abirmoya Santra and P. K. Tiwari </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Multi Conference on Automation, Computing, Control, Communication and Compressed Sensing (iMac4s-2013). Kottayam, Kerala</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-4</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 38 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="38" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 62</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> S Basu, S K Sarkar and S K Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Indian Journal of Physics</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.87</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.333-338</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=5 HEIGHT= 33 WIDTH="45"><div> <B>2005</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> Sukhendu Deb Roy and M. Jagadesh Kumar, "Realizing High-voltage Thin Film Lateral Bipolar Transistors on SOI with a Collector-tub,"  <I><B>Microelectronics International,</B></I> Vol.22, pp.3-9, March <B>2005.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="161"><div> Sajad A. Loan, S. Qureshi and S. Sundar Kumar Iyer</div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="61"><div> July 2 - 4, 2008</div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="187"><div> <I><B>Proceedings of the World Congress on Engineering </B></I></div> <div> <I><B>WCE 2008, July 2 - 4, 2008, London, U.K.</B></I></div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="63"><div> <I><B>Vol I</B></I></div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="161"><div> Sajad A. Loan , S. Qureshi and S. Sundar Kumar Iyer</div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="61"><div> 2009</div> <div> <I><B>ISBN 978-90-481-2310-0 (Print) 978-90-481-2311-7 (Online)</B></I></div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="187"><div> <I><B>Book Advances in Electrical Engineering and Computational Science</B></I></div> <div> <I><B>Publisher Springer Netherlands</B></I></div> <bR> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD><NOBR><div> Volume 39</div> </NOBR></tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD><NOBR><div> Pages 23-32</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="161"><div> S. A. Loan, A. Sajad, S. Qureshi, SSK Iyer</div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD><NOBR><div> FEB 2009</div> </NOBR></tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="187"><div> <I><B>SEMICONDUCTOR SCIENCE AND TECHNOLOGY</B></I></div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="63"><div> Vol. 24</div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="92"><div> Article No. 025017  </div> </tD> </tR> <tR> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="161"><div> Loan, S.A., Qureshi, S., Iyer, S.S.K.</div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD><NOBR><div> <I><B>International Journal of</B></I></div> <div> <I><B>Nanomanufacturing</B></I></div> </NOBR></tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD><NOBR><div> Vol.4 (1-4) </div> </NOBR></tD> <tD VALIGN=TOP BGCOLOR=#DDDDDD WIDTH="92"><div> pp. 42-50</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=7 HEIGHT= 49 WIDTH="45"><div> <B>2004</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar and G.Venkateshwar Reddy, "Evidence for suppressed Short-channel effects in deep Submicron Dual-Material Gate (DMG) Partially Depleted SOI MOSFETs – A Two-dimensional Analytical Approach,"  <I><B>Microelectronic Engineering</B></I>, Vol.75 (4), pp.367-374,  November <B>2004.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Baishya, S.; Mallik, A.; Sarkar, C. K.</div> </tD> <tD VALIGN=TOP><NOBR><div> Sept 2007</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Trans. on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.54</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.2520-2525</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP><NOBR><div> N. Jafar, and N. Soin</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 6-8 March 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>5th International Colloquium on Signal Processing & Its Applications, 2009. CSPA 2009.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Page(s):156 - 159</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Norsyahida Jafar and Norhayati Soin</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009 </div> <bR> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings of the 8th WSEAS international conference on Microelectronics, nanoelectronics, optoelectronics </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="99" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Pages 63-67 </div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jafar, N., Soin, N. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>AIP Conference Proceedings </B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 1136</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 820-824</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> P. Suveetha Dhanaselvam, N.B.Balamurugan, P.Vanitha, S. Theodore Chandra</div> </tD> <tD VALIGN=TOP><NOBR><div> May, 2010</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Advanced Science and Technology </B></I>(<FONT SIZE="2" COLOR="#0000FF" FACE="Arial" ><U>http://www.sersc.org/journals/IJAST/</U></FONT>) </div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 18</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.49-58 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Nirmal;   Shruti, K.;   Thomas, D.M.;   Samuel, P.C.;   Kumar, V.;   Mohankumar; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Electronics Computer Technology (ICECT), 2011 3rd</B></I></div> <div> <I><B>International Conference on</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.26-30</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=33 HEIGHT= 49 WIDTH="45"><div> <B>2004</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar and C. Linga Reddy, "Realizing wide bandgap P-SiC-emitter Lateral Heterojunction Bipolar Transistors with Low Collector-Emitter Offset Voltage and High Current Gain-A Novel Proposal using Numerical Simulation," <I><B>IEE Proceedings - Circuits, Devices and Systems,</B></I> Vol.151, pp.399-405, October <B>2004.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=8 WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="161"><div> Orlov, L.K., Drozdov, Yu.N. , Shevtsov, V.B. , Bozhenkin, V.A. , Vdovin, V.I. </div> </tD> <tD VALIGN=TOP ROWSPAN=8><NOBR><div> April 2007</div> </NOBR></tD> <tD VALIGN=TOP ROWSPAN=8><NOBR><div> <I><B>Physics of the Solid State</B></I></div> </NOBR></tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="63"><div> Volume 49, Issue 4</div> </tD> <tD VALIGN=TOP ROWSPAN=8><NOBR><div> Pages 627-633</div> </NOBR></tD> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> <tD VALIGN=TOP ROWSPAN=8 WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="161"><div> Nanver, L.K., Schellevis, H., Scholtes, T.L.M., La Spina, L., Lorito, G., Sarubbi, F., Gonda, V., Popadic?, M., Buisman, K., De Vreede, L.C.N., Huang, C., Milosavljevic, S., Goudena, E.J.G.</div> </tD> <tD VALIGN=TOP ROWSPAN=8><NOBR><div> Dec 2008</div> </NOBR></tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="187"><div> <I><B>Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting </B></I></div> </tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="63"><div> Article number 4662707</div> </tD> <tD VALIGN=TOP ROWSPAN=8><NOBR><div> Pages 33-40</div> </NOBR></tD> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> <tD VALIGN=TOP ROWSPAN=8 WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="161"><div> Tanner, Philip, (Dimitrijev, Sima, Harrison, H. Barry </div> </tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="61"><div> 2008</div> </tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="187"><div> <I><B>COMMAD: 2008 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS & DEVICES </B></I></div> </tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="63"><div>  </div> </tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="92"><div>   pp.41-43 </div> </tD> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> <tD VALIGN=TOP ROWSPAN=8 WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="161"><div> Nanver LK, Schellevis H, Scholtes TLM, La Spina L, Lorito G, Sarubbi F, Gonda V, Popadic M,</div> <div> Buisman K, de Vreede LCN,</div> <div> Huang C, Milosavljevic S,</div> <div> Goudena EJG</div> </tD> <tD VALIGN=TOP ROWSPAN=8><NOBR><div> SEP 2009</div> <bR> </NOBR></tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="187"><div> <I><B>IEEE JOURNAL OF SOLID-STATE CIRCUITS    </B></I></div> </tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="63"><div> Volume: 44    Issue: 9</div> </tD> <tD VALIGN=TOP ROWSPAN=8 WIDTH="92"><div> Pages: 2322-2338 </div> <bR> </tD> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 66 WIDTH="45"><div> <B>2004</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar and G. Venkatesh Reddy, "Analytical Model for the Threshold Voltage of  Dual Material Gate (DMG) Partially Depleted SOI MOSFET and Evidence for Reduced Short-channel Effects," <I><B>The 7th International Conference on Solid-State and Integrated-Circuit Technology(ICSICT-04), October 18-21, 2004 Beijing, China, </B></I>pp. 1204-1207</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sona P. Kumara, , Anju Agrawalb, Rishu Chaujara, Mridula Guptaa and R.S.</div> <div> Guptaa,</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> Available online 25 March 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Superlattices and Microstructures</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=63 HEIGHT= 49 WIDTH="45"><div> <B>2004</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar and Anurag Chaudhry, "Two-Dimensional Analytical Modeling of Fully Depleted Dual-Material Gate (DMG) SOI MOSFET and Evidence for Diminished Short-Channel Effects", <I><B>IEEE Trans. on Electron Devices, </B></I>Vol.51,<B> </B>pp.569-574, April<B> 2004</B>.</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> P. Hashemi, A. Behnam, E. Fathi, A. Afzali-Kusha and M. El Nokali</div> </tD> <tD VALIGN=TOP><NOBR><div> Aug 2005</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> <I><B>Solid-State Electronics</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> 49</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.1341-1346</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Goel K, Saxena M, Gupta M, et al</div> </tD> <tD VALIGN=TOP><NOBR><div> Jan 2005</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Trans. on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 52</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.23-29</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> E. Fathi,A. Behnam,P.Hashemi, B.Esfandyarpour, M. Fathipour</div> </tD> <tD VALIGN=TOP><NOBR><div> JUN 2005</div> <bR> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEICE Transactions on Electronics</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> E88C (6)</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> pp.1122-1126</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Fathi, E.; Farbiz, F.; Mortazavi, Y.; Fathipour, M.;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> Dec. 7-9, 2005</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>2005 International Semiconductor Device Research Symposium</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> PP.105 - 106</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> P.Hashemi,A.</div> <div> Behnam, E. Fathi, A. Afzali-Kusha, </div> </tD> <tD VALIGN=TOP><NOBR><div> Dec. 2004</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>The 16th International</B></I></div> <div> <I><B>Conference on </B></I><I><B>Microelectronics, 2004. ICM 2004 Proceedings. </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.372-375</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> A. Behnam, E. Fathi, P. Hashemi, B. Esfandiarpoor,  M.Fathipour</div> </tD> <tD VALIGN=TOP><NOBR><div> Dec. 2004</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>The 16th International</B></I></div> <div> <I><B>Conference on Microelectronics, 2004. ICM 2004 Proceedings. </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.68-71</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 7</div> </tD> <tD VALIGN=TOP><NOBR><div> D.Datta, S.Dasgupta</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Dec. 2004</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings of the IEEE INDICON 2004</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="37" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> pp.549 - 552</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 8</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sigbjørn Kolberg and Tor A. Fjeldly</div> </tD> <tD VALIGN=TOP><NOBR><div> July 2006</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Journal of Computational Electronics</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> vol.5</div> <div> No.2-3</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.217-222</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 9</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Z.-C.Li, Y.-L.Jiang, L.-L.Zhang</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> J<I><B>ournal of China University of Mining and Technology</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 16 (3)</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.308-311</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 10</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sigbjørn Kolberg, Tor A. Fjeldly</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Physica Scripta</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> T126</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.57-60</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 11</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Na, Kee-Yeol; Kim, Yeong-Seuk</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 45 (12)</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.9033-9036</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 12</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li Zunchao, Jiang Yaolin, Wu Jianmin</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>CHINESE JOURNAL OF SEMICONDUCTORS  </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.28 No.3</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.327-331 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 13</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> LI Zun-chao, JIANG Yao-lin, WU Jian-min</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>ACTA ELECTRONICA SINICA </B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.35 No.2</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.212-215</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 14</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Dai, Y.-H., Gao, S., Ke, D.-M., Chen, J.-N.</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Tien Tzu Hsueh Pao/Acta Electronica Sinica</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 35</div> <div> No.5</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.844-848</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 15</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> R. Gupta, S.K. Aggarwal, M. Gupta, R.S. Gupta</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Journal of Semiconductor Technology and Science (www.jsts.org)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.7, No.2</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.120-131</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 16</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chiang, Te-Kuang; Chen, Mei-Li</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 46 (6A)</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.3283-3290</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 17</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, Zunchao; Jiang, Yaolin; Zhang, Lili;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, 2007.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.66 - 69</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 18</div> </tD> <tD VALIGN=TOP><NOBR><div> Hsin-Kai Wang </div> <div> Supervisor: T.K. Chiang </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> Date of Submission 2008-07-23</div> <bR> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <B>MS Thesis: Study of Subthreshold Behavior for the Dual-Material Surrounding-Gate MOSFETs</B></div> <div> <U>http://etd.lib.stut.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0407109-183709-685</U><FONT SIZE="2" COLOR="#000000" FACE="Arial" > </FONT></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 19</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Mei-Li Chen</div> <div> Supervisor: Te-Kuang Chiang</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <I><B>PhD Thesis</B></I><I><B>: </B></I><B>Investigation of Small-Geometrical Behavior on Double-Gate MOSFETs</B></div> <div> <A HREF="http://etd.lib.stut.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0407109-183703-132" TARGET="_top" TITLE="http://etd.lib.stut.edu.tw/ETD-db/ETD-se"><U><U>http://etd.lib.stut.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0407109-183703-132</U></U></A></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 20</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Baishya, S.; Mallik, A.; Sarkar, C. K.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B> </B></I><I><B>IEEE Trans. on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.54</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.2520-2525</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 21</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chiang, T. K.; Chen, M. L.; Wang, H. K.;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Conference on Electron Devices and Solid-State Circuits, 2007. EDSSC 2007.</B></I> </div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> pp.597 - 600</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 22</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kumar SP, Chaujar R, Gupta M, Gupta RS, Agrawal A </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOL</B></I><I><B>S 1-5 </B></I>Bangkok, THAILAND, DEC 11-14, </div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Pages: 703-706    </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 23</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> N. B. Balamurugan, K. Sankaranarayanan and M. Suguna</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Far East Journal of Electronics and Communications</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.1</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.135-146</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 24</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kasturi, Poonam; Saxena, Manoj; Gupta, Mridula; Gupta, R. S.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2008</div> <bR> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Trans. on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.55</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.372-381</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 25</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chakraborty, S.; Mallik , A.; Sarkar, C. K.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Trans. on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.55</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 827-832</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 26</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sona P. Kumar, , Anju Agrawal, Rishu Chaujar, Mridula Gupta and R.S.</div> <div> Gupta,</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> Available online 25 March 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Superlattices and Microstructures</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 27</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Luan, S., Liu, H., Jia, R., Wang, J.</div> </tD> <tD VALIGN=TOP><NOBR><div> April 2008</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors </B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Volume 29</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Pages 746-750 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 28</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chakraborty, Saurav; Mallik, Abhijit; Sarkar, Chandan Kumar;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>26th International Conference on Microelectronics, 2008. MIEL 2008. </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Page(s):145 - 150</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 29</div> </tD> <tD VALIGN=TOP><NOBR><div> Arefinia, Z.; Orouji, A.A.; </div> <bR> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Silicon Nanoelectronics Workshop, 2008. SNW 2008.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="37" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s): 1 - 2</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 30</div> </tD> <tD VALIGN=TOP><NOBR><div> A.A. Orouji and Z. Arefinia</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Physica E: Low-dimensional Systems and Nanostructures</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.41</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.552-557</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 31</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Marina Reyboz, Olivier Rozeau and Thierry Poiroux</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> January 16, 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>BOOK: Planar Double-Gate Transistor Publisher Springer Netherlands </B></I></div> <div> <I><B>DOI 10.1007/978-1-4020-9341-8 </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Pages 55-88</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 32</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Luan, S., Liu, H., Jia, R., Wang, J.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B> Frontiers of Electrical and Electronic Engineering in China</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 4 (1)</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 98-103</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 33</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Rathnamala Rao, Guruprasad Katti, Dnyanesh S. Havaldar, Nandita DasGupta, Amitava DasGupta</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Solid-State Electronics</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.53</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.256-265</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 34</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Zun-Chao LI </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>CHIN. PHYS. LETT.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 26</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No.018502</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 35</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Amara Amara and Olivier Rozeau</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> <div> ISBN 978-1-4020-9327-2 (Print)</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <B>Book: </B><I>Compact Modeling of Double Gate MOSFET for IC Design</I> </div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.55-88</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 36</div> </tD> <tD VALIGN=TOP><NOBR><div> Arefinia, Z., Orouji, A.A</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Feb 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Japanese Journal of Applied Physics</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 48 (2)</div> </tD> <tD VALIGN=TOP><NOBR><div> art. no. 024501 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 37</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, Zun-Chao; Zhang, Rui-Zhi; Jiang, Yao-Lin</div> </tD> <tD VALIGN=TOP><NOBR><div> MAR 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 48 (3):</div> </tD> <tD VALIGN=TOP><NOBR><div> Art. No. 034505 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 38</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> T.K. Chiang</div> </tD> <tD VALIGN=TOP><NOBR><div> May 2009</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> <I><B>Solid-State Electronics</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 53</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 490-496</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 39</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Hosseini, Seyed Ebrahim; Anvarifard, Mohammad Kazem; Armaki, Mahdi Gordi;</div> </tD> <tD VALIGN=TOP><NOBR><div> May 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> 2009 International Conference on Signal Processing Systems</div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> pp.897 - 900 </div> <bR> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 40</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> N. Mohankumar ; Binit Syamal ; C. K. Sarkar </div> </tD> <tD VALIGN=TOP><NOBR><div> June 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Electronics</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Vol.96 (6)</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> pages 603 - 611</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 41</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Rupendra Kumar Sharma, Ritesh Gupta, Mridula Gupta and R. S. Gupta</div> </tD> <tD VALIGN=TOP><NOBR><div> June 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.56</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.1284-1291</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 42</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, Junsheng; Dai, Yuehua; Chen, Junning; Ke, Daoming;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 24-26 Sept. 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>5th International Conference on Wireless Communications, Networking and Mobile Computing, 2009. WiCom '09.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s):1 - 4 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 43</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Anvarifard MK, Hosseini SE, Armaki MG</div> </tD> <tD VALIGN=TOP><NOBR><div> OCT 2009  </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS    </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 48    Issue: 10  </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 104501    </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 44</div> </tD> <tD VALIGN=TOP><NOBR><div> Chen ML, Lin WK, Chen SF </div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> OCT 2009 </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS  </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 48    Issue: 10</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 104503    </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 45</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Anvarifard, M.K.; Armaki, M.G.; Hosseini, S.E.; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Conference on Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s): 29 - 32 </div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 46</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Liu, Xin; Dai, Yuehua; Chen, Junning; Li, Junsheng; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>1st International Conference on Information Science and Engineering (ICISE), 2009 </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Page(s): 5173 - 5176 </div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 47</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> P. Suveetha Dhanaselvam, N.B.Balamurugan, P.Vanitha, S. Theodore Chandra</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Advanced Science and Technology </B></I>(<FONT SIZE="2" COLOR="#0000FF" FACE="Arial" ><U>http://www.sersc.org/journals/IJAST/</U></FONT>) </div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 18</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.49-58 </div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 48</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Mei-Li Chen</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Southern Taiwan University of Science and Technology </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.35</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.39-50</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 49</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Zhou Hai-Liang; Zhang Min-Xuan; Fang Liang </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> <bR> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>ACTA PHYSICA SINICA</B></I></div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Vol.59 (7) </div> <bR> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> pp.5010-5017 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 50</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li Jin, Liu Hongxia, Li Bin, Cao Lei, and Yuan Bo</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Journal of Semiconductors</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 31, No. 8</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp:084008-1 to 084008-6</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 51</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chiang, TK</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 49 Issue: 7</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 074304 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 52</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> PK Tiwari, S Dubey, M Singh, S Jit </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Journal of Applied Physics</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.108</div> <bR> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No.074508</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 53</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Choi, Ji-Min; 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of Kaohsiung, Taiwan</I></div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 73</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Swapnadip De, Angsuman Sarkar, and Chandan Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Conference on Electrical and Computer Engineering (ICECE).</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> <I>p.400</I></div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 74</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Swapnadip De, Angsuman Sarkar, and Chandan Kumar Sarka</div> </tD> <tD VALIGN=TOP 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ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 76</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Swapnadip De, Angsuman Sarkar, and Chandan Kumar Sarka</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Applied Engineering Research</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.7(5)</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.471-483</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 37 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="37" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 77</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kee-Yeol Na, Ki-Ju Baek, and Yeong-Seuk Kim</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Transactions on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.59</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.3273-3279</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 78</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Swapnadip De, Angsuman Sarkar, Chandan Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>WSEAS TRANSACTIONS on CIRCUITS and SYSTEMS</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Issue 11, Volume 11,</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.371-380</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 79</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Lou, Haijun, Zhang, Lining; Zhu, Yunxi; Lin, Xinnan; Yang, Shengqi; He, Jin; Chan, Mansun J.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Transactions on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.59 </div> </tD> <tD VALIGN=TOP><NOBR><div> pp.1829 - 1836</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 80</div> </tD> <tD VALIGN=TOP><NOBR><div> Souvik, Mandal</div> <div> Supervisor:C. K. 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Anvarifard and Ali A. 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Pardeshi, Godwin Raj, Sudhansu Pati, N Mohankumar, Chandan</div> <div> Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Superlattices and Microstructures</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.60</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.10-20</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=37 HEIGHT= 49 WIDTH="45"><div> <B>2004</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> Anurag Chaudhry and M. Jagadesh Kumar,"Investigation of the Novel Attributes of a Fully Depleted (FD) Dual-Material Gate (DMG) SOI MOSFET,"   <I><B>IEEE Trans. on Electron Devices,</B></I> Vol.51, pp.1463-1467, September<I><B> </B></I><B>2004.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Wu, J., Zhong, X., Li, D., Bi, J., Hai, C.</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2005</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 26 (10)</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.1875-1880</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Fathi, E.; Farbiz, F.; Mortazavi, Y.; Fathipour, M.;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> Dec. 7-9, 2005</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>2005 International Semiconductor Device Research Symposium</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> PP.105 - 106</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> WU Jun-feng, BI Jin-shun, LI Duo-li, XUE Li-jun, HAI Chao-he</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JOURNAL OF FUNCTIONAL MATERIALS AND DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.12 No.5</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.389-394</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Na, Kee-Yeol; Kim, Yeong-Seuk</div> <bR> </tD> <tD VALIGN=TOP><NOBR><div> DEC 2006</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 45 (12)</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.9033-9036</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, Z.-C., Jiang, Y.-L., Zhang, L.-L.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Journal of China University of Mining and Technology</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 16 (3)</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.308-311</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP><NOBR><div> Li, Z., Jiang, Y., Zhang, L.</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 40 (10)</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.1087- 1090</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 7</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Havaldar, D.S., Dasgupta, A., Dasgupta, N.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B> </B></I> <I><B>International Journal of Nanoscience</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 5 (4-5)</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.541-545</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 8</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> LI Zun-chao, JIANG Yao-lin, WU Jian-min</div> </tD> <tD VALIGN=TOP><NOBR><div> Feb 2007</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> <I><B>ACTA ELECTRONICA SINICA </B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.35 No.2</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> P.212-215</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 9</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li Zunchao, Jiang Yaolin, Wu Jianmin</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> March 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>CHINESE JOURNAL OF SEMICONDUCTORS </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.28 No.3</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> P.327-331 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 10</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Dai, Y.-H., Gao, S., Ke, D.-M., Chen, J.-N.</div> </tD> <tD VALIGN=TOP><NOBR><div> May 2007</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Tien Tzu Hsueh Pao/Acta Electronica Sinica</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 35</div> <div> No.5</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.844-848</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 11</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chiang, Te-Kuang; Chen, Mei-Li</div> </tD> <tD VALIGN=TOP><NOBR><div> JUN 2007</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 46 (6A)</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.3283-3290</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 12</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, Zunchao; Jiang, Yaolin; Zhang, Lili;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 3-4 June 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceeding of 2007 International Workshop on Electron Devices and Semiconductor Technology, 2007.  </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.66 - 69</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 13</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Mei-Li Chen</div> <div> Supervisor: Te-Kuang Chiang</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> Date of submission:2007-07-25</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <I><B>PhD Thesis: </B></I><B>Investigation of Small-Geometrical Behavior on Double-Gate MOSFETs</B></div> <div> <A HREF="http://etd.lib.stut.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0407109-183703-132" TARGET="_top" TITLE="http://etd.lib.stut.edu.tw/ETD-db/ETD-se"><U><U>http://etd.lib.stut.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0407109-183703-132</U></U></A></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 14</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> ;Havaldar, Dnyanesh S.   Katti, Guruprasad   Jadeja, B. M.   Rao, Rathnamala</div> <div> Nandita DasGupta and Amitava DasGupta</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 29-31 Dec. 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Internatonal Conference on  Microelectronics, 2007. ICM 2007.</B></I></div> <bR> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp: 417-420</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 15</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chakraborty, S.; Mallik , A.; Sarkar, C. K.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> March 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Trans. on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.55</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 827-832</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 16</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chakraborty, Saurav; Mallik, Abhijit; Sarkar, Chandan Kumar;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 11-14 May 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>26th International Conference on Microelectronics, 2008. MIEL 2008. </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Page(s):145 - 150</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 17</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chaujar, R.; Kaur, R.; Saxena, M.; Gupta, M.; Gupta, R. S.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> October 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Trans. on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.55</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.2602-2613</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 18</div> </tD> <tD VALIGN=TOP><NOBR><div> A.A. Orouji and Z. Arefinia</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Physica E: Low-dimensional Systems and Nanostructures</B></I> <FONT SIZE="3" COLOR="#000000" FACE="Arial" > </FONT><FONT SIZE="1" COLOR="#000000" FACE="Arial" >Available on line</FONT></div> <div> doi:10.1016/j.physe.2008.10.005</div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="63" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="63" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 19</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Zun-Chao LI </div> </tD> <tD VALIGN=TOP><NOBR><div> Jan 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>CHIN. PHYS. LETT.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 26</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No.018502</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 20</div> </tD> <tD VALIGN=TOP><NOBR><div> Arefinia, Z., Orouji, A.A</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Feb 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Japanese Journal of Applied Physics</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 48 (2)</div> </tD> <tD VALIGN=TOP><NOBR><div> art. no. 024501 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 21</div> </tD> <tD VALIGN=TOP><NOBR><div> N. Jafar, and N. Soin</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 6-8 March 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>5th International Colloquium on Signal Processing & Its Applications, 2009. CSPA 2009.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Page(s):156 - 159</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 22</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, Zun-Chao; Zhang, Rui-Zhi; Jiang, Yao-Lin</div> </tD> <tD VALIGN=TOP><NOBR><div> MAR 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 48 (3): </div> </tD> <tD VALIGN=TOP><NOBR><div> Art. No. 034505 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 23</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> N. Mohankumar ; Binit Syamal ; C. K. Sarkar </div> </tD> <tD VALIGN=TOP><NOBR><div> June 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Electronics</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Vol.96 (6)</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> pages 603 - 611</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 24</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> N. Mohankumar, Binit Syamal, C.K. Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> December 2009</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Reliability </B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 49, Issue 12</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages 1491-1497 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 25</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, Junsheng; Dai, Yuehua; Chen, Junning; Ke, Daoming;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 24-26 Sept. 2009 </div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>5th International Conference on Wireless Communications, Networking and Mobile Computing, 2009. WiCom '09.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s):1 - 4 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 26</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jafar, N., Soin, N. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>AIP Conference Proceedings </B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 1136</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 820-824</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 27</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Liu, Xin; Dai, Yuehua; Chen, Junning; Li, Junsheng;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>1st International Conference on    Information Science and Engineering (ICISE), 2009 </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Page(s): 5173 - 5176 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 28</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> N. Mohankumar,Binit Syamal, and Chandan Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> APRIL 2010 </div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> VOL. 57</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.820-826</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 29</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Khani Parashkoh, Mohsen; Hosseini, Seyed Ebrahim; Abaspur Kazerouni, Iman; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Electrical Engineering (ICEE), 2010 18th Iranian Conference on </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Page(s): 372 - 376 </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 30</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li Jin, Liu Hongxia, Li Bin, Cao Lei, and Yuan Bo</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> August 2010</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Journal of Semiconductors</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 31, No. 8</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp:084008-1 to 084008-6</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 31</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chiang, TK</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div>  Volume: 49 Issue: 7</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 074304</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 32</div> </tD> <tD VALIGN=TOP><NOBR><div> NIRMAL, VIJAYA KUMAR</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> December, 2010 </div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Advanced Science and Technology</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 25</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp:1-6</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 33</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> ALOK KUMAR KUSHWAHA</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <I><B>PhD thesis: NATIONAL INSTITUTE OF TECHNOLOGY KURUKSHETRA</B></I></div> <div> <I><B>http://www.nitkkr.ac.in/alok_phd_thesis_ece.pdf</B></I></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 34</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Li, Z., Xu, J., Liu, L., Liang, F., Mei, K. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEICE Transactions on Electronics</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> E94-C (6)</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> pp. 1120-1126. </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 35</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Aouaj, Abdellah; Bouziane, Ahmed; Nouacry, Ahmed;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 7-9 April 2011 </div> <bR> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Multimedia Computing and Systems (ICMCS), 2011 International Conference on </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> art. no. 5945711<FONT SIZE="3" COLOR="#000000" FACE="Arial" > </FONT></div> <div> pp: 1 - 4 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 36</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Abdellah Aouaja, Ahmed Bouzianea & Ahmed Nouaçrya</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Electronics  </B></I><FONT SIZE="2" COLOR="#FF0033" FACE="Arial" ><I><B>Available online 2011</B></I></FONT></div> <div> <I><B>DOI:10.1080/00207217.2011.589737</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 37</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sarvesh Dubey, Dheeraj Gupta, Pramod Kumar Tiwari, S. Ji</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>J. Nano- Electron. Phys</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.3</div> </tD> <tD VALIGN=TOP><NOBR><div>  No1, P. 576-58</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 38</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sanjoy Deb, N.Basanta Singh, Nurul Islam, and Subir Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON NANOTECHNOLOGY</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Pages 472-478</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 39</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Swapnadip De, Angsuman Sarkar, Chandan Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Journal of Electron Devices</B></I></div> <div> <I><B>www.jeldev.org</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 12</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 704-712</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 37 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="37" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 40</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Aouaj, A. , Bouziane, A., Nouary, A.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Electronics</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 99, Issue 1</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 141-148</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 37 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="37" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 41</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ali A. Orouji, , Morteza Rahimian</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Current Applied Physics, 2012</B></I></div> <div> <I><B>http://www.sciencedirect.com/science/article/pii/S15</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="37" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Find the page numbers</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 37 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="37" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 42</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Tiwari, P.K., Dubey, S., Singh, K., Jit, S.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Superlattices and Microstructures</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.51, Issue 5,</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp: 715-724</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 43</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Haijun Lou, Lining Zhang, Yunxi Zhu, Xinnan Lin, Shengqi Yang, Jin He, and Mansun Chan</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> VOL. 59, NO. 7</div> </tD> <tD VALIGN=TOP><NOBR><div> pp:1829-1836</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 44</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Bibhas Manna, Saheli Sarkhel, Nurul Islam, S. Sarkar, and Subir Kumar Sarkar,</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Find the page numbers</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 37 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="37" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 45</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kee-Yeol Na, Ki-Ju Baek, and Yeong-Seuk Kim</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Transactions on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.59</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.3273-3279</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 46</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Lou, Haijun, Zhang, Lining; Zhu, Yunxi; Lin, Xinnan; Yang, Shengqi; He, Jin; Chan, Mansun J.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Transactions on Electron Devices</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.59 </div> </tD> <tD VALIGN=TOP><NOBR><div> pp.1829 - 1836</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 47</div> </tD> <tD VALIGN=TOP><NOBR><div> Mandal, Souvik</div> <div> Supervisor: C. K. Sarkar</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>M.Tech Thesis Jadavpur University</B></I></div> <div> <A HREF="https://dspace.jdvu.ac.in/handle/123456789/19782" TARGET="_top" TITLE="https://dspace.jdvu.ac.in/handle/1234567"><U><I><B>Available online</B></I></U></A></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 54 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="54" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 48</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> D. Nirmal , P. Vijayakumar, Divya Mary Thomas, Binola K. Jebalin, N. Mohankumar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Reliability</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 53, Issue 3</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 499-504</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 49</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Angsuman Sarkar, Swapnadip De, Chandan Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Numerical Modelling: Electronic Networks, Devices and Fields</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Vol.26(1)</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 41-55</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 37 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="37" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 50</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Gupta Santosh Kumar and Baishya Srimanta</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Research Journal of Recent Sciences</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Vol. 2(1)</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.44-52</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 37 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="37" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 51</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> P. Suveetha Dhanaselvam and N.B. Balamurugan </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Journal</B></I></div> <div> <A HREF="http://www.sciencedirect.com/science/article/pii/S0026269213000517" TARGET="_top" TITLE="http://www.sciencedirect.com/science/art"><U><I><B>Available online</B></I></U></A></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.44</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.400-404</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 65 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 52</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Hemant M. Pardeshi, Godwin Raj, Sudhansu Pati, N Mohankumar, Chandan</div> <div> Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Superlattices and Microstructures</B></I></div> <div> <A HREF="http://www.sciencedirect.com/science/article/pii/S0749603613001055" TARGET="_top" TITLE="http://www.sciencedirect.com/science/art"><U><I><B>Available online</B></I></U></A></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.60</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.10-22</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=11 HEIGHT= 49 WIDTH="45"><div> <B>2004</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar and Vinod Parihar, "Surface Accumulation Layer Transistor (SALTran): A New Bipolar Transistor for Enhanced Current Gain and Reduced Hot-carrier Degradation,"  <I><B>IEEE Trans. on Device and Materials Reliability, </B></I>Vol.4, pp. 509-519, September <B>2004</B>.</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=5 WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP ROWSPAN=5 WIDTH="161"><div> E. Zhao; M. El-Diwany, J.D. Cressler, J. Shibley, A. Sadovnikov, D.Kocoski, T.L.Krakowski.</div> </tD> <tD VALIGN=TOP ROWSPAN=5 WIDTH="61"><div> 2005</div> </tD> <tD VALIGN=TOP ROWSPAN=5 WIDTH="187"><div> <I><B>Proc.of the IEEE Bipolar /BiCMOS Circuits &</B></I></div> <div> <I><B>Technology Meeting</B></I></div> </tD> <tD VALIGN=TOP ROWSPAN=5 WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="1" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP ROWSPAN=5><NOBR><div> pp.216 - 219</div> <bR> </NOBR></tD> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> <tD VALIGN=TOP ROWSPAN=5 WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP ROWSPAN=5 WIDTH="161"><div> E Zhao</div> <bR> <div> Low-Frequency Noise in SiGe HBTs and Lateral BJTs </div> </tD> <tD VALIGN=TOP ROWSPAN=5 WIDTH="61"><div> December 2006 - </div> <bR> <div> etd.gatech.edu</div> </tD> <tD VALIGN=TOP ROWSPAN=5 COLSPAN=2 WIDTH="253"><div> <I><B>PhD Thesis,</B></I></div> <div> <I><B>School of Electrical and Computer Engineering Georgia Institute of Technology</B></I></div> </tD> <tD VALIGN=TOP ROWSPAN=5 WIDTH="92"><div> p.19</div> </tD> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> <tD VALIGN=TOP ROWSPAN=97 HEIGHT= 33 WIDTH="45"><div> <B>2004</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> G.Venkateshwar Reddy and M. Jagadesh Kumar, "Investigation of the Novel Attributes of a Single-Halo Double Gate SOI MOSFET: 2D Simulation Study," <I><B>Microelectronics Journal, </B></I>Vol.35, pp.761-765, September<I><B> </B></I><B>2004</B></div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=5 WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP ROWSPAN=5 WIDTH="161"><div> F. Djeffal, Z. Dibi, M.L. Hafiane and D. 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Mohankumar,Binit Syamal, and Chandan Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> APRIL 2010 </div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> VOL. 57</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.820-826</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 14</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> ALOK KUMAR KUSHWAHA</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <I><B>PhD thesis: NATIONAL INSTITUTE OF TECHNOLOGY KURUKSHETRA</B></I></div> <div> <I><B>http://www.nitkkr.ac.in/alok_phd_thesis_ece.pdf</B></I></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 15</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Naderi, A., Keshavarzi, P., Orouji, A.A. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Superlattices and Microstructures</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Vol.50 (2)</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> pp. 145-156</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 16</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Nirmal, Kumar, V., Shruti, K., Thomas, D.M., Samuel, P.C., Kumar, M.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>ICECT 2011 - 2011 3rd International Conference on Electronics Computer Technology</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> art. no. 5941553, pp. 26-30. </div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 17</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> D Nirmal, P Vijayakumar, K Shruti, N Mohankumar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Circuit Theory and Applications</B></I></div> <div> <I><B>DOI: 10.1002/cta.1800</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.40</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Find the page numbers</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 35 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="35" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 18</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ali A. Orouji, , Morteza Rahimian</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Current Applied Physics, 2012</B></I></div> <div> <I><B>http://www.sciencedirect.com/science/article/pii/</B></I><I><B>S156</B></I><I><B>7173912001</B></I><FONT SIZE="3" COLOR="#000000" FACE="Arial" ><I><B>216</B></I></FONT></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="35" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Find the page numbers</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 19</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Angsuman Sarkar, Aloke Kumar Das, Swapnadip Deb, Chandan Kumar Sarkar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Journal</B></I></div> <bR> <bR> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.43, No.11</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.873-882</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 20</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kordrostami, Z., Sheikhi, M.H., Zarifkar, A.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Transactions on Nanotechnology</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 11, Issue 3</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 526-533</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 21</div> </tD> <tD VALIGN=TOP><NOBR><div> Mandal, Souvik</div> <div> Supervisor: C. K. Sarkar</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>M.Tech Thesis Jadavpur University </B></I></div> <div> <A HREF="https://dspace.jdvu.ac.in/handle/123456789/19782" TARGET="_top" TITLE="https://dspace.jdvu.ac.in/handle/1234567"><U><I><B>Avaialble online</B></I></U></A></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 22</div> </tD> <tD VALIGN=TOP><NOBR><div> I.V. Singh, M.S. Alam</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>CODEC 2012 - 5th International Conference on Computers and Devices for Communication</B></I><I><B>, </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> art. no. 6509250</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 23</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> D. Nirmal, P. Vijay Kumar, Doreen Joy, Binola K Jebalin and N. Mohan Kumar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE 5</B></I><I><B>th </B></I><I><B>International Nanoelectronics Conference (INEC)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.12-19</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=55 HEIGHT= 49 WIDTH="45"><div> <B>2004</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> Anurag Chaudhry and M. Jagadesh Kumar, "Controlling Short-channel Effects in Deep Submicron SOI MOSFETs for Improved Reliability: A Review", <I><B>IEEE Trans. on Device and Materials Reliability, </B></I>Vol.4, pp.99-109, March <B>2004</B>.</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=5 WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP ROWSPAN=5 WIDTH="161"><div> Chengxin Lin "<I>Jitter in Oscillators with 1/f Noise sourses and application to True RNG Cryptography"</I></div> </tD> <tD VALIGN=TOP ROWSPAN=5><NOBR><div> Jan 2006</div> </NOBR></tD> <tD VALIGN=TOP ROWSPAN=5 WIDTH="187"><div> <I><B>PhD Thesis,</B></I><I><B> </B></I></div> <div> <I><B>Dept of Electrical Engg., Worcester Polytechnic Institute, </B></I>Worcester, MA 01609-2280, USA</div> </tD> <tD VALIGN=TOP ROWSPAN=5 WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="1" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP ROWSPAN=5 WIDTH="92"><div> p.221</div> </tD> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chen, S.; Vandersand, J.; Blalock, B.J.; Akarvardar, K.; Cristoloveanu, S.; Mojarradi, M.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 12-16 Sept. 2005</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>ESSCIRC 2005. Proceedings of the 31st European </B></I><I><B>Solid-State Circuits Conference, 2005.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> pp.311 - 314</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Singh Deogun, H.   Sylvester, D.   Rao, R.   Nowka, K.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 25-28 Sept. 2005</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings. IEEE International </B></I><I><B>SOC Conference, 2005. </B></I> </div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> pp.147- 150 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kushwaha, Alok; Pandey, Manoj K.; Gupta, A. K</div> </tD> <tD VALIGN=TOP><NOBR><div> APR 2007</div> <bR> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>MICROWAVE AND OPTICAL TECHNOLOGY LETTERS</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 49 (4)</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.979-986</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Student: <B>Chien-Ming Lai, </B><B>Advisors: </B>Yean-kuen Fang and Wen-Kuan Yeh</div> <bR> </tD> <tD VALIGN=TOP><NOBR><div> Jan 2007</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <B>PhD Thesis</B></div> <div> Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University Tainan, Taiwan, ROC</div> </tD> <tD VALIGN=TOP COLSPAN=2 WIDTH="158"><div> <B>Title:</B> "The studies of Indium Halo Implantation and CESL (Contact Etch Stop Layer) Strain Engineering on 90 nm CMOSFETs with Different Gate Structures"</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chakraborty, S.   Mallik, A.   Sarkar, C.K.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 16-20 Dec. 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div>  <I><B>International Workshop on Physics of Semiconductor Devices, 2007. IWPSD 2007.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp: 150-153</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 7</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Yan Zhiying, Dou Weimin, Hu Diqing </div> </tD> <tD VALIGN=TOP><NOBR><div> Feb 2008</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Micronanoelectronic Technology</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.45</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.74-77</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 8</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> F. Ji, J.P. Xu, P.T. Lai, J.G. Guan</div> </tD> <tD VALIGN=TOP><NOBR><div> May 2008</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> <I><B>Microelectronics Reliability</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> <I><B>48(5)</B></I></div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.693-697</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 9</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Cheng-Jyun Huang</div> <div> Title:Study of back-gated carbon nanotube transistors</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> Master's thesis</div> <div> 2006-07-13</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> Dept of Mechanical Engg., National Central University,Taoyuan County 32001, Taiwan (R.O.C.) </div> <div> <A HREF="http://thesis.lib.ncu.edu.tw/ETD-db/ETD-browse/browse" TARGET="_top" TITLE="http://thesis.lib.ncu.edu.tw/ETD-db/ETD-"><U><U>http://thesis.lib.ncu.edu.tw/ETD-db/ETD-browse/browse</U></U></A></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 10</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ali A. Orouji</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> SPRING 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IRANIAN JOURNAL OF ENGINEERING SCIENCES</B></I></div> <div> ijes.ui.ac.ir</div> </tD> <tD VALIGN=TOP WIDTH="63"><div> VOL. 1, NO.1,</div> <bR> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.59-67</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 11</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Luan Su-Zhen; Liu Hong-Xia; Jia Ren-Xu; Cai Nai-Qiong</div> </tD> <tD VALIGN=TOP><NOBR><div> JUN 2008</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> <I><B>ACTA PHYSICA SINICA</B></I></div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> Vol.57 (6)</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> pp.3807-3812</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 12</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Yi-Chuen Eng,; Jyi-Tsong Lin,; Shiang-Shi Kang,;</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2-4 June 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE International Conference on Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s):75 - 78</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 13</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jyi-Tsong Lin, Ying-Chieh Tsai, Yi-Chuen Eng, Shiang-Shi Kang, Yi-Ming Tseng, Hung-Jen Tseng, Po-Hsieh Lin</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 7-11 July 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>15th Internaional Symposium on Physical and Failure Analysis of Integrated Circuits, IPFA 2008</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-4</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 14</div> </tD> <tD VALIGN=TOP><NOBR><div> Zahra Arefinia, Ali A. Orouji</div> <bR> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> DEC 2008</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Physica E: Low-dimensional Systems and Nanostructures</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 41 </div> </tD> <tD VALIGN=TOP><NOBR><div> Pages: 196-201</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 15</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> N.B. Balamurugan, K. Sankaranarayanan, P. Amutha, and F. Fathima John</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> September 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Journal of Semiconductor Technology and Science</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.8</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.221-226</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 16</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Razavi, Pedram; Orouji, Ali A</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> Sept. 29 -Oct. 4 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Conference on Micro-electronics, 2008. ENICS '08</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.11 - 14</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 17</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Razavi, Pedram; Orouji, Ali A</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 6-8 Oct. 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>11th International Biennial Baltic Electronics Conf., 2008. BEC 2008. </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.83 - 86</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 18</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chun-Hsing Shih and and Sheng-Pin Yeh</div> </tD> <tD VALIGN=TOP><NOBR><div> Dec 2008</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>SEMICOND SCI TECH</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.23</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article. No.125033</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 19</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> K. FOBELETS, P. W. DING, Y. SHADROKH,</div> <div> J. E. VELAZQUEZ-PEREZ</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> December 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of High Speed Electronics and Systems</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol: 18</div> </tD> <tD VALIGN=TOP><NOBR><div> Page: 783 - 792</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 20</div> </tD> <tD VALIGN=TOP><NOBR><div> A.A. Orouji and Z. Arefinia</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Physica E: Low-dimensional Systems and Nanostructures</B></I> Available on line</div> <div> doi:10.1016/j.physe.2008.10.005</div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 21</div> </tD> <tD VALIGN=TOP><NOBR><div> Arefinia, Z.; Orouji, A.A.; </div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Silicon Nanoelectronics Workshop, 2008. SNW 2008</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s): 1 - 2</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 22</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Loan, Sajad A.; Qureshi, S.; Iyer, S. Sundar Kumar</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 11-13 Feb. 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Spanish Conference on Electron Devices, 2009. CDE 2009. </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s):77 - 80</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 23</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Rupendra Kumar Sharma, Ritesh Gupta, Mridula Gupta and R. S. Gupta</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> VOL. 56, NO. 6,</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.1284-1291</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 24</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Haykel Ben Jamaa, Bahmankheradmand Boroujeni, Giovanni De Michelli, Yusuf Leblebici, Christian Piguet, Alaxandre Schmid, and Milos Stanisavljevic.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> Springer, 2009</div> <div> BOOK: Nanosystems Design and Technology</div> <div> ISBN 1441902546, 9781441902542</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Chapter 3: Design technologies for nanosystems beyond ultimately scaled CMOS.</B></I></div> <bR> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="164" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> p.45</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 25</div> </tD> <tD VALIGN=TOP><NOBR><div> Author Ying-chieh Tsai</div> <div> Jyi-Tsong Lin - advisor</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> Date of Submission 2009-07-23</div> <div> Master's Thesis</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <A HREF="http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723109-003834" TARGET="_top" TITLE="http://etd.lib.nsysu.edu.tw/ETD-db/ETD-s"><U><I><B>http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723109-003834</B></I></U></A></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 26</div> </tD> <tD VALIGN=TOP><NOBR><div> Shiang-Shi Kang</div> <div> Supervisor: Jyi-Tsong Lin</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> Date of submission 2009-06-26</div> <div> Master's Thesis</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <A HREF="http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810109-154308" TARGET="_top" TITLE="http://etd.lib.nsysu.edu.tw/ETD-db/ETD-s"><U><I><B>http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810109-154308</B></I></U></A></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 27</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Cheng, H.-W., Hwang, C.-H., Li, Y.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Journal of Electrical Engineering</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 16, Issue 4</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 301-312</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 28</div> </tD> <tD VALIGN=TOP><NOBR><div> Elahipanah H, Orouji AA</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS    </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.me: 48    Issue: 11  </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 114503    </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 29</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Palash Roy; Binit Syamal; Mohankumar, N.; Sarkar, C.K.; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 14-16 Dec. 2009 </div> <bR> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>4th International Conference on Computers and Devices for Communication, 2009. CODEC 2009. </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s):1 - 4 </div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 30</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Roy, P.; Syamal, B.; Mohankumar, N.; Sarkar, C.K.; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2009</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>International Conference on  Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="82" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> Page(s): 70 - 73 </div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 31</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Burignat, S., Flandre, D., Md Arshad, M.K., Kilchytska, V., Andrieu, F., Faynot, O., Raskin, J.-P.</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Solid-State Electronics </B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 54, Issue 2</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 213-219 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 32</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sajad A. Loan,S. Qureshi, and S. Sundar Kumar Iyer</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE TRANSACTIONS ON ELECTRON DEVICES</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> VOL. 57, NO. 3</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.671-680</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 33</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Orouji, A. A.; Elahipanah, H.; </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010 </div> <bR> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE Transactions on </B></I></div> <div> <I><B>Device and Materials Reliability</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 10 , Issue: 1 </div> </tD> <tD VALIGN=TOP><NOBR><div> Page(s): 92 - 95 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 34</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> P. Suveetha Dhanaselvam, N.B.Balamurugan, P.Vanitha, S. 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Sin.</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol. 61, No. 24</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> 247303</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 98 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="98" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 65</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Mohd Mustafa Al Bakri Abdullah, Liyana Jamaludin, Rafiza Abdul Razak, Zarina Yahya and Kamarudin Hussin</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Advanced Materials Research</B></I></div> <bR> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.626</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.190-194</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 99 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="99" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 66</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kumar Prasannajit Pradhan; Sushanta Kumar Mohapatra; Prasanna Kumar Sahu</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Emerging Technology Trends in Electronics, Communication and Networking (ET2ECN), 2012 1st International Conference on</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="99" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.1-4</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 65 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="65" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 67</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Morteza Rahimian, Ali A. Orouji, Amirhossein Aminbeidokhti</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Current Applied Physics</B></I></div> <bR> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.13</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.779-784</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 39 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="39" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 68</div> </tD> <tD VALIGN=TOP><NOBR><div> Hashim, Y. , Sidek, O.</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Advanced Materials Research</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.626</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.190-194</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 69</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ganesh C Patil and S Qureshi</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Semiconductor Science and Technology</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.28</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No. 045002</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 39 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="39" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 70</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Kumar, M., Dubey, S., Tiwari, P.K., Jit, S. </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Journal of Computational Electronics</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 12 (1)</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 20-28</div> <bR> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 66 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 71</div> </tD> <tD VALIGN=TOP><NOBR><div> Kushwah, R.S., Akashe, S.</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>7th International Conference on Intelligent Systems and Control, ISCO 2013; Coimbatore, Tamilnadu</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> Article no.</div> <div> 6481166,</div> <bR> </NOBR></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.295-300</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 72</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Balwinder Raj, A.K. Saxena,  S. Dasgupta</div> <bR> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Materials Science in Semiconductor Processing </B></I></div> <div> <A HREF="http://www.journals.elsevier.com/materials-science-in-semiconductor-processing/recent-articles/" TARGET="_top" TITLE="http://www.journals.elsevier.com/materia"><U><I><B>Available online</B></I></U></A></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> Find page numbers</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 49 WIDTH="45"><div> <B>2004</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> M. Jagadesh Kumar and D. Venkatesh Rao, "Proposal and Design of a New SiC-Emitter Lateral NPM Schottky Collector Bipolar Transistor (SCBT) on SOI for VLSI Applications," <I><B>IEE Proceedings - Circuits, Devices and Systems,</B></I> Vol.151, pp.63-67, February <B>2004.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Sun Guo-Sheng, Liu Xing-Fang, Wang Lei, Zhao Wan-Shun, Yang Ting, Wu Hai-Lei, Yan Guo-Guo, Zhao Yong-Mei, Ning Jin, Zeng Yi-Ping and Li Jin-Min</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> August 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <B>Chinese Physics B </B></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.19 </div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article No. 088101</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=3 HEIGHT= 49 WIDTH="45"><div> <B>2004</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> Anurag Chaudhry and M. Jagadesh Kumar, "Exploring the Novel Characteristics of Fully Depleted Dual-Material Gate (DMG) SOI MOSFET using Two-Dimensional Numerical Simulation Studies" <I><B>VLSI Design, 2004. Proceedings. 17th International Conference on ,</B></I> pp.662 - 665, 5-9 Jan. <B>2004</B> </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> E. Fathi,A. Behnam,P.Hashemi, B.Esfandyarpour, M. Fathipour</div> </tD> <tD VALIGN=TOP><NOBR><div> JUN 2005</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEICE Transactions on Electronics</B></I></div> </tD> <tD VALIGN=TOP><NOBR><div> E88C (6)</div> </NOBR></tD> <tD VALIGN=TOP><NOBR><div> pp.1122-1126</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chiang, TK</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 49 Issue: 7</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 074304 </div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><div> <B>2004</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> Meena Mishra, M. Jagadesh Kumar, Yashvir Singh, S.R.Shukla, H.P.Vyas, D.S.Rawal, A.Naik, H. S. Sharma, B. K.Sehgal and R.Gulati, "Inverse Modeling of Delta Doped PHEMTs," <I><B>Journal of Vacuum Science & Technology A</B></I>-Vol.22(3), pp.1036-1039, May-June 2004.</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 98 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="98" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> M. Ahmad, H.T.Butt, T. Tauqeer, M. Missous</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>ASDAM 2012, The Ninth International Conference on Advanced Semiconductor</B></I></div> <div> <I><B>Devices and Microsystems, November 11–15, 2012, Smolenice, Slovakia</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="98" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.187-190</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><div> <B>2003</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> G.Venkateshwar Reddy and M. Jagadesh Kumar, "A New Dual-Material-Double-Gate (DMDG) SOI MOSFET for Nanoscale CMOS Design", <I><B>2003 International Semiconductor Device Research Symposium (ISDRS),</B></I> pp.238-239, Washington DC, USA, December 10-12, <B>2003</B>. </div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="33" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chiang, TK</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2010</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 49 Issue: 7</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Article Number: 074304 </div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 33 WIDTH="45"><div> <B>2003</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#DDDDDD WIDTH="625"><div> M. Jagadesh Kumar and C. Linga Reddy, "2D-Simulation and Analysis of Lateral SiC N-emitter SiGe P-base Schottky Metal-collector (NPM) HBT on SOI", <I><B>Microelectronics Reliability,</B></I><I> </I>Vol.43, pp.1145-1149, July <B>2003.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Orlov LK, Steinman EA, Smyslov, TN, Ivin, NL, AN Tereshchenko </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Physics of the Solid State</B></I></div> <div> <I><B>http://journals.ioffe.ru/ftt/</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 54, Issue 4</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.708-715</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=4 HEIGHT= 49 WIDTH="45"><div> <B>2003</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar and C. Linga Reddy, "A New High Voltage 4H-SiC Lateral Dual Sidewall Schottky (LDSS) Rectifier: Theoretical Investigation and Analysis", <I><B>IEEE Trans. on Electron Devices</B></I><B>, </B>Vol.50, pp.1690-1693, July <B>2003</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> J.H. Zhao, K. Sheng, R.C. Lebron-Velilla</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2005</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I>I</I><I><B>nternational Journal of High Speed Electronics and Systems</B></I><B>  </B></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 15 (4),</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.821-866 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Frederic Lanois and Sylvain Nizou </div> <div> ST Microelectronics Inc</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> Pub. Date June 29, 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>United states patent application number: US 2006/0138450 A1</B></I></div> <div> <I><B> Patent no.  7,622,752</B></I></div> <div> <I><B>November 24, 2009  </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="81" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="81" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Michael S. Shur, Serguei Rumyantsev, Michael Levinshtein</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2006</div> <div> Book</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>SiC Materials And Devices</B></I></div> <div> <I><B>Published by World Scientific</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.1</div> </tD> <tD VALIGN=TOP WIDTH="92"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="92" HSPACE="0" VSPACE="0"></tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 49 WIDTH="45"><div> <B>2003</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar and D. Venkatesh Rao, "A New SiGe Base Lateral PNM Schottky Collector Bipolar Transistor on SOI for Non-Saturating VLSI Logic Design," Proceedings of the<I><B> 16th International Conference on VLSI Design(ISBN 0-7695-1868-0),</B></I> pp:489-492, January <B>2003</B>.</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> G. Lorito, H.Schellevis and L. K. Nanver</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 29-30 November 2007</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proc. SAFE/STW, Veldhoven, The. Netherlands</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP><NOBR><div> pp.525-528 </div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=5 HEIGHT= 38 WIDTH="45"><div> <B>2002</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar and Vikram Verma, "Elimination of bipolar induced drain breakdown and single transistor latch in submicron PD SOI MOSFETs," <I><B>IEEE Trans. on Reliability, </B></I>Vol.51, pp.367-370,<I><B> </B></I>September<B> 2002.</B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Chiaki T, Kiguchi M, Saiki K, Koma A</div> </tD> <tD VALIGN=TOP><NOBR><div> JUL 2003</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>JAPANESE JOURNAL OF APPLIED PHYSICS PART 1</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 42</div> </tD> <tD VALIGN=TOP><NOBR><div> pp.4713-4715</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Wu, J., Zhong, X., Li, D., Kang, X., Shao, H., Yang, J., Hai, C., Han, Z.</div> <div> Pan Tao Ti Hsueh Pao</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2005</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Chinese Journal of Semiconductors</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> 26(4)</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.656-661</div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Jyi-Tsong Lin; Kao-Cheng Lin; Tai-Yi Lee; Yi-Chuen Eng</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 14-17 May 2006</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>25th International Conference on Microelectronics, 2006 </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Article number 1651008</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 521-524</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 4</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Tai-Yi Lee, Jyi-Tsong Lin,   Po-Hsieh Lin, Yi-Chuen Eng, Kao-Cheng Lin  </div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 11-14 May 2008</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>26th International Conference on </B></I><I><B>Microelectronics, 2008. MIEL 2008</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="53" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> pp.481-484</div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 98 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="98" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 5</div> </tD> <tD VALIGN=TOP><NOBR><div> Author:Shiang-Shi Kang</div> <div> Jyi-Tsong Lin - advisor</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="61"><div> Submision date: 2009-06-26</div> <div> Master's Thesis</div> </tD> <tD VALIGN=TOP COLSPAN=3 WIDTH="348"><div> <A HREF="http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810109-154308" TARGET="_top" TITLE="http://etd.lib.nsysu.edu.tw/ETD-db/ETD-s"><U><I><B>http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810109-154308</B></I></U></A></div> </tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 39 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="39" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 6</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Ali A. Orouji, Abdollah Abbasi</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2012</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Superlattices and Microstructures</B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume 52, Issue 3</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 552–559</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP HEIGHT= 49 WIDTH="45"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="49" ALIGN="bottom" WIDTH="45" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="46"><div> 7</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Singh Parihar, Mukta, Ghosh, Dipankar and Kranti, Abhinav</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2013</div> </tD> <tD VALIGN=TOP><NOBR><div> <I><B>Journal of Applied Physics</B></I></div> </NOBR></tD> <tD VALIGN=TOP WIDTH="63"><div> Vol.113, Issue.18</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> pp.184503 - 184503-5</div> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=4 HEIGHT= 49 WIDTH="45"><div> <B>2002</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> M. Jagadesh Kumar and D. Venkatesh Rao, " A New Lateral PNM Schottky Collector Bipolar Transistor (SCBT) on SOI for Non-saturating VLSI Logic Design," <I><B>IEEE Trans. on Electron Devices</B></I><B>, </B>Vol.49, pp.1070-1072, June <B>2002. </B></div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 1</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Nanver, L.K., Schellevis, H., Scholtes, T.L.M., La Spina, L., Lorito, G., Sarubbi, F., Gonda, V., Popadic?, M., Buisman, K., De Vreede, L.C.N., Huang, C., Milosavljevic, S., Goudena, E.J.G.</div> </tD> <tD VALIGN=TOP><NOBR><div> Dec 2008</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Article number 4662707</div> </tD> <tD VALIGN=TOP><NOBR><div> Pages 33-40</div> </NOBR></tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 2</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> Nanver LK, Schellevis H, Scholtes TLM, La Spina L, Lorito G, Sarubbi F, Gonda V, Popadic M,</div> <div> Buisman K, de Vreede LCN,</div> <div> Huang C, Milosavljevic S,</div> <div> Goudena EJG</div> </tD> <tD VALIGN=TOP><NOBR><div> SEP 2009</div> </NOBR></tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>IEEE JOURNAL OF SOLID-STATE CIRCUITS    </B></I></div> </tD> <tD VALIGN=TOP WIDTH="63"><div> Volume: 44    Issue: 9</div> </tD> <tD VALIGN=TOP WIDTH="92"><div> Pages: 2322-2338    </div> </tD> </tR> <tR> <tD VALIGN=TOP WIDTH="46"><div> 3</div> </tD> <tD VALIGN=TOP WIDTH="161"><div> I M Ciurus, M Dimian and A Graur</div> </tD> <tD VALIGN=TOP WIDTH="61"><div> 2011</div> </tD> <tD VALIGN=TOP WIDTH="187"><div> <I><B>5th International Workshop on Multi-Rate Processes and Hysteresis</B></I> (MURPHYS 2010) IOP Publishing </div> </tD> <tD VALIGN=TOP WIDTH="63"><IMG BORDER="0" SRC="1x1.gif" HEIGHT="66" ALIGN="bottom" WIDTH="63" HSPACE="0" VSPACE="0"></tD> <tD VALIGN=TOP WIDTH="92"><div> 012004</div> <bR> </tD> </tR> <tR> <tD VALIGN=TOP ROWSPAN=2 HEIGHT= 49 WIDTH="45"><div> <B>2002</B></div> </tD> <tD VALIGN=TOP COLSPAN=6 BGCOLOR=#BBBBBB WIDTH="625"><div> Yashvir Singh and  M. 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