Development of:
(I worked at the Nagoya University Japan for the execution of project.)
Goal:
Flurocarbon plasmas are nowadays widely used for the plasma etching processes in various capacitively coupled plasma (CCP) reactors. However, in spite of the importance of discharges using flurocarbon gases for plasma processing of SiNx, SiOx, etc. for microelectronics, the connection between fundamental plasma parameters, negative ions, and the kinetics of plasma and its species formation in such plasmas is not yet fully understood.
We combinely utilized RF compensated LP and laser photodetachment techniques to study the dynamics of plasma parameters and negative ions in dual frequency pulsed plasmas in relation to the applied pulse. Using plasma control the optimized etching conditions were investigated.
Recent Publication(s):
Conference Papers:
Material etched: SiO2
RF/UHF Hybrid plasma source for Energy and Electronic materials with several plasma diagnostics
Materials developed: Si based: a-SiNx, a-Si, nc-Si, and Si Q-dots
(I worked at the Sungkyunkwan University Korea for the execution of project with an industry partner.)
Major Goal:
Fabrication of Si-based Solar films: a-Si, nc-Si, Si Q-dots
Materials developed: Si based: a-SiNx
An 850 MHz ultra-high frequency plasma source with RF 13.56 MHz for PECVD applications for different kinds of materials
(I worked at the Sungkyunkwan University Korea for the execution of project.)
Outputs:
FConventional and multiple-hole hollow cathode (MHHC) showerhead electrodes of an RF capacitively coupled plasma (CCP) source were designed to study their capability of plasma generation and suitability of plasma application like PECVD. The plasma characteristics of the CCPs were critically examined for the PECVD plasmas produced by various source configurations. The optimum performance in terms of high-density plasma generation and high emission intensity of excited species was observed for the operation using MHHC discharge. The desired flexible barrier films were fabricated with improved properties.
A large area plasma source for large area processing
(I worked at the Sungkyunkwan University Korea for the execution of project.)
Goal:
The new trend of thin film synthesis required in digital electronics and optoelectronic industry is reduction of film thickness and damage with crystalline structure at very low temperature less than 100C. However, it is well known that crystalline structures’ synthesis of most oxides films at low temperature cannot be achieved by conventional magnetron sputtering due to limited energy flux for crystallization.
We have made new design and control of film process with novel magnetron sputtering. The magnetic field was confined to 3 dimensional hollow type configuration with additional rectangular side wall mode on planar magnetic configuration. The discharge behaviour and plasma parameters of novel magnetron sputtering source were compared with those of conventional planar magnetron sputtering source. The discharge characteristics and corresponding particles deposition behaviour were observed to be significantly changed.
Advanced hybrid magnetron sputtering processes
Materials developed by hybrid plasmas:
(I worked at the Sungkyunkwan University Korea for the execution of project)
Goal:
Atmospheric pressure plasma (APP) jets or plasma plumes have recently shown the potential for applications such as plasma surface modification and plasma medicine. These applications need insight into their plasma chemistry and discharge behavior, which are strongly influenced by the plasma parameters. In contrast to conventional APP jet devices, we utilized a combination of six electrodes, and the outer ground electrodes were separated by Teflon to form a moderate-sized plasma column of nearly 10 mm.
APP jet with 10 mm plasma column for Bio- and healthcare applications
Goal:
I have supported the heating and current drive team at KSTAR, NFRI Korea. I have done some computations using Brambilla and Toray-GA codes to extract the information on the abilities of heating systems. Based on Toray-GA computations, I have proposed the operation for 105 GHz and 140 GHz dual frequency gyrotron for effective utilization of ECCD. Also, I have designed some RF and high power microwave components for high power microwave transmission.