Fabrication of nonvolatile resistive random access memory devices based on Polymer-MWCNT nanocomposite.

Resistive switching device based on FTO/P3HT-CNT/Al structure is fabricated by varying the amount of MWCNT in the composite film. The fabricated device exhibit bipolar resistive switching behaviour with a nonvolatile memory effect. The device's ON/OFF state current ratio increases, and turn-on voltage decreases with increasing the MWCNT content in the composite. The memory device exhibited ~10² resistance ratio, good retention time ~10³ sec, and good endurance characteristics.