Advanced Semiconductor Materials and Devices Group

S. No.

Patents filed/granted

1.

Enhancement in the photoresponse of MoS₂ photodetector using a quasi-dry layer transfer process

Rajendra Singh, Madan Sharma,

Patent Application No. FT/IDF/02/2022/25, Dated: April, 2022, Country: India, Status: Filed

2.

Molecularly Modified AlGaN/GaN HEMT Epitaxial Film Surface and Improvement of Schottky Barrier Diode Thereof

2. Rajendra Singh, Manjari Garg, V. Ramgopal Rao, Tejas R. Naik,

Patent Application No. 201711041322, Dated: 18 November, 2017, Country: India, Status: Filed

3.

Molecularly Modified Gallium Nitride based Ultraviolet Photodetector and a Method of Fabrication Thereof₂O₃ nanostructures,

Rajendra Singh, Manjari Garg, V. Ramgopal Rao

Indian Patent no 373681 granted in August, 2021

S. No.

Book Chapters

1.

Characterization of 2D transition metal dichalcogenides

Pallavi Aggarwal, Aditya Singh, Sahin Sorifi, Madan Sharma and Rajendra Singh ,

2D Materials for Electronics, Sensors and Devices: Synthesis, Characterization, Fabrication and Application, Elsevier (2022)

2.

Silicon-silver dendritic nanostructures induced photoelectrochemical solar water splitting for energy applications,

R. Singh, A. Ghosh, T. Sahadasgupta, A.K. Ganguli and A. Mahajan,

Intech Publishers (2021)

3.

Growth, properties and applications of β-Ga₂O₃ nanostructures,

M. Kumar, S. Kumar, V. Kumar and R. Singh

Gallium Oxide: Technology, Devices and Applications, Edited by S.J. Pearton, M. Mastro and F. Ren, Elsevier publications (2018) (Paperback ISBN: 9780128145210, ebook ISBN: 9780128145227)

4.

Ion implantation-induced layer splitting of semiconductors,

U. Dadwal, M. Reiche and R.Singh,

Intech Publishers, 389–408, DOI: 10.5772/35956, ISBN 978-95351-0634-0 (2012)

S. No.

Special Issues of Journals

1.

Special issue on Wide Bandgap Semiconductor Materials and Devices

Haiding Sun, Bharat Jalan, Shibing Long, Yuhao Zhang, Rajendra Singh, Xuelin Yang, Yuji Zhao, Bin Liu

 Crystals (2022)

2.

Special Issue on Quantum Materials and Devices,

R. Singh, A. Ghosh, T. Sahadasgupta, A.K. Ganguli and A. Mahajan,

 Bulletin of Materials Science (2021)

3.

JSS Focus Issue on Gallium Oxide Based Materials and Devices II, 

Edited by F. Ren, S. Pearton, J. Kim, A. Polykov, H. von Wenckstern, R. Singh and X. Lu, 

ECS J. Solid Sci. Technol. 9 060001 (2020)

4.

JSS Focus Issue on Gallium Oxide Based Materials and Devices, 

Edited by F. Ren, R. Singh, S. Pearton, J. Kim, A. Polykov, S. Ringel and R. Jia, 

ECS J. Solid Sci. Technol. 8 Y3 (2019)

International Journals

S. No.

2024

1.

 S Kandar, K Bhatt, N Kumar, AK Kapoor, R Singh, 

ACS Applied Nano Materials 2024 

2.

 K Bhatt, S Kandar, N Kumar, A Kapoor, R Singh, 

Applied Surface Science, 159832 1 2024 

S. No.

2023

1.

 K Narang, RK Bag, A Pandey, A Goyal, VK Singh, J Lohani, BS Yadav, , 

Journal of Applied Physics 134 (14) 2023 

2.

 H Sheoran, JK Kaushik, R Singh, 

Materials Science in Semiconductor Processing 165, 107606 3 2023 

3.

 P Singh, S Ghosh, M Jain, A Singh, R Singh, M Balal, SR Barman, 

The Journal of Physical Chemistry C 127 (32), 16010-16018 1 2023 

4.

 N Kaur, A Ghosh, P Bisht, R Singh, BR Mehta, 

ACS Applied Nano Materials 6 (15), 14300-14307 2 2023 

5.

 H Sheoran, R Singh, 

Journal of Physics D: Applied Physics 1 2023 

6.

 A Ghosh, K Agarwal, SG Munoz, P Bisht, CK Vishwakarma, N Kaur, 

arXiv preprint arXiv:2305.19217 2023 

7.

 S Dewan, PD Khanikar, R Mudgal, A Singh, PK Muduli, R Singh, S Das, 

ACS Applied Materials & Interfaces 2 2023 

8.

 N Manikanthababu, C Joishi, J Biswas, K Prajna, K Asokan, JV Vas, 

IEEE Transactions on Electron Devices 

9.

 Pallavi Aggarwal, Prashant Bisht, Abhishek Ghosh, A.K. Gourishetty, E.Y. Chang, B.R. Mehta and R. Singh, 

ACS Appl. Nanomat. 6 (2023)7404 – 7413 

10.

 Narinder Kaur, Abhishek Ghosh, Prashant Bisht, R. Singh and B.R. Mehta, 

ACS Appl. Nanomat. X (2023) XX 

11.

 N. Manikanthababu, C. Joishi, J. Biswas, K. Prajna, K. Asokan, J.V. Vas, R. Medwal, R.C. Meena, S. Lodha and R. Singh, 

IEEE Electron Dev.70 (2023) 3711 – 3717 

12.

 Hardhyan Sheoran, and Rajendra Singh, 

J. Phys. D: Appl. Phys. 56 (2023) 405113 (11pp) 

13.

 Hardhyan Sheoran, Janesh K. Kaushik, and Rajendra Singh, 

Mater. Sci. Semicon. Process. 165 (2023), 107606 (8pp) 

14.

 Sahin Sorifi, P. Aggarwal, S. Kaushik and R. Singh, 

ACS Appl. Electron. Mater. 5 (2023), 541- 460 

S. No.

2022

1.

 H. Sheoran, S.Fang, F. Liang, Z. Huang, S. Kaushik, N. Manikanthababu, X. Zhao, H. Sun, R. Singh, and S. Long, 

ACS Appl. Mater. Interfaces 14 (2022) 52096-52107 

2.

 Narinder Kaur, Abhishek Ghosh, Prashant Bisht, Arvind Kumar, Vishakha Kaushik, Nisha Kodan, Rajendra Singh, and B.R. Mehta, 

Journal of Materials Chemistry C 10 (2022) 14220 (12 pp) 

3.

 N. Manikanthababu, Hardhyan Sheoran, K. Prajna, S. A. Khan, K. Asokan, J. V. Vas, R. Medwal, B. K. Panigrahi and R. Singh, 

IEEE Electron Dev. (2022) accepted  

4.

 Sahin Sorifi, S. Kaushik, Hardhyan and R. Singh, 

J. Phys. D: Appl. Phys. 55 (2022) 365105 (15pp) 

5.

 Aditya Singh, Jason Lynch, Surendra Anantharaman, Jin Hou, Simrjit Singh, Gwangwoo Kim, Aditya Mohite, Rajendra Singh, Deep Jariwala, 

J. Phys. Chem. C 126 (2022) 11158-11164  

6.

 Hardhyan Sheoran, Vikram Kumar, and Rajendra Singh, 

ACS Appl. Electron. Mater. 4 (2022) 2589 - 2628 (Review article) 

7.

 Shuchi Kaushik, S. Karmakar, R.K. Varshney, Hardhyan Sheoran, Dipankar Chugh, C. Jagadish, H. H. Tan and Rajendra Singh, 

ACS Appl. Nanomat. 5 (2022) 7481-7491  

8.

 Madan Sharma, Aditya Singh, Pallavi Aggarwal and Rajendra Singh, 

ACS Omega 7 (2022) 11731 – 11741 

9.

 N. Manikanthababu, B. R. Tak, K. Prajna, S. Sarkar, R.C. Meena, K. Asokan, S. R. Barman, R. Singh and B. K. Panigrahi, 

Mater. Sci. Eng. B 281 (2022) 115716 (7pp) 

10.

 Kapil Narang, Ruby Khan, A. Pandey, V.K. Singh, R. K. Bag, M.V.G. Padmavati, Renu Tyagi and Rajendra Singh, 

Mater. Res. Bull. 153 (2022) 111875 (7pp) 

11.

 Pallavi Aggarwal, Shuchi Kauhsik, Prashant Bisht, Madan Sharma, Aditya Singh, Bodh Raj Mehta, Rajendra Singh, 

Cryst. Growth Des. 22 (2022) 3206 -3217 

12.

 Kapil Narang, V.K. Singh, A. Pandey, Ruby Khan, R. K. Bag, D.S. Rawal, M.V.G. Padmavati, Renu Tyagi, Rajendra Singh, 

J. Mat. Sci. 57 (2022) 5913-5923 

13.

 Kapil Narang, Akhilesh Pandey, Ruby Khan, Vikash K. Singh, Rajesh K. Bag, M.V. G. Padmavati, Renu Tyagi, Rajendra Singh, 

Mat. Sci. Eng. B 278 (2022) 115635 (7pp) 

14.

 S. Rani, M. Kumar, H. Sheoran, R. Singh, V.N. Singh, 

Materials Today Comm. 30, 103135 (2022) 

15.

Localized surface plasmon resonance-enhanced solar-blind Al_0.4Ga_0.6N MSM photodetectors exhibiting high-temperature robustness,

S. Kaushik, S. Karmakar, P. Bisht, C-H Liao, X. Li, R.K. Varshney, B.R. Mehta, and R. Singh,

 Nanotechnology 33, 145202  (2022)

16.

GaSe/Si based Vertical 2D/3D Heterojunction for High-performance Self-Driven Photodetector,

S. Sorifi, S. Kaushik and R. Singh,

Nanoscale Adv. 4 (2022) 4, 479-490

S. No.

2021

4.

Review and comparison of layer transfer methods for the application of two-dimensional materials in traditional and emerging platforms, 

T.F. Schranghamer, M. Sharma, R. Singh, and S. Das, 

Chem. Soc. Rev. 50 (2021) 11032 - 11054 (Review article) (IF – 54.56)

5.

2D-materials based transistors for future integrated circuits: current status, challenges, and prospects, 

S. Das and R. Singh, 

Nature Electronics 4 (2021) 786-799 (Review article) (IF – 33.68)

6.

Two-Dimensional layered materials for ultraviolet photodetection: A review,

S. Kaushik and R. Singh,

Adv. Opt. Mater. (2021) 2002214 (20pp) (Review article)  (IF – 9.93)

7.

Recent advances in the growth of gallium oxide thin films employing various growth techniques – A review,

B.R. Tak, S. Kumar, A.K. Kapoor, D. Wang, X. Li, H. Sun, and R. Singh,

J. Phys. D: App. Phys 54 (2021) 453002 (Review article)

8.

9.

Observation of Negative Photoconductivity at Bandgap and Super Bandgap Excitations in GaN Nanorods,

S. Kaushik, A.K. Kapoor, and R. Singh,

Optical Materials 121 (2021) 111553

10.

Deep level traps responsible for persistent photocurrent in pulsed-laser-deposited β-Ga₂O₃ thin films,

B. R. Tak, M-M. Yang, M. Alexe, and R. Singh,

Crystals 11 (2021) 1046

11.

Temperature driven perturbations in growth kinetics, structutural and optical properties of NiO thin films,

M. Mishra, S. Barthwal, B. R. Tak, and R. Singh,

Phys. Stat. Sol. (a) 218 (2021) 2100241

12.

Blistering kinetics in H-implanted 4H-SiC for large area exfoliation,

M. Sharma, K.K. Soni, A. Kumar, T. Ohkubo, A.K. Kapoor, and R. Singh,

Curr. Appl. Phys. 31 (2021) 141 - 150

13.

Study of surface exfoliation induced by hydrogen implantation and annealing in GaSb(100) substrate,

R. Pathak, U. Dadwal, A.K. Kapoor, M. Vallet, A. Claverie, and R. Singh,

Mater. Sci. Semicond. Process 134 (2021) 105998

14.

Metal-semiconductor interface engineering in layered 2D materials for device applications,

 M. Moun and R. Singh,

Bull. Mater. Sci 44 (2021) 223 (Review article)

15.

Organic passivation of Al_0.50GaN_0.50N epilayers using self-assembled monolayer of Zn(II) porphyrin for improved solar-blind photodetector performance,

S. Kaushik, T. Naik, M. Ravikanth, C-H. Liao, X. Li, V. R. Rao and R. Singh,

Semicond. Sci. Technol. 36 (2021) 055001

16.

Ultra-low noise and self-powered β-Ga₂O₃ deep ultraviolet photodetector array with large linear range,

B.R. Tak and R. Singh,

ACS Appl. Electron. Mater. 3 (2021) 2145 – 2151.

17.

NaCl-assisted substrate dependent 2D planar nucleated growth of MoS₂,

A. Singh, M. Moun, M. Sharma, A. Barman, A.K. Kapoor and R. Singh,

Appl. Surf. Sci. 538 (2021) 148201

18.

Study of temperature dependent behaviour of h-BN nanoflakes based deep UV photodetector,

S. Kaushik, S. Sorifi and R. Singh,

Photonics and Nanostructures – Fundamentals and Applications 43 (2021) 100887

S. No.

2020

19.

Photovoltaic and flexible deep ultraviolet wavelength detector based on novel β-Ga₂O₃/muscovite heteroepitaxy,

B. Ram Tak, M-M Yang, Y-H Lai, Y-Hao Chu and R. Singh,

Scientific Reports 10 (2020) 16098

20.

Swift heavy ion irradiation induced modifications in the electrical and surface properties of β-Ga₂O₃, N. Manikanthababu,

B. R. Tak, K. Prajna, S. Sarkar, K. Asokan, D. Kanjilal, S. R. Barman, R. Singh and B. K. Panigrahi,

 Appl. Phys. Lett. 117 (2020) 142105

21.

g-ray irradiation-induced chemical and structural changes in CVD monolayer MoS2,

A. Singh and R. Singh,

ECS J. Solid State Sci. Technol. 9 (2020) 093011

22.

Effects of gamma ray irradiation on AlGaN/GaN heterostructures and high electron mobility transistor devices,

C. Sharma, Tian-Li Wu, D.S. Chao and R. Singh,

J.  Electro Mat, 49 (2020) 6789-6797

23.

Observation of large surface area exfoliation in hydrogen implanted Ge,

R. Pathak, U. Dadwal and R. Singh,

Phys. Stat. Sol. (a) 2000182 (2020) 1-8

24.

Temperature-dependent electrical characteristics of Ni/Au vertical Schottky barrier diodes on β-Ga₂O₃ epilayers,

Hardhyan, B. R. Tak, N. Manikanthababu and R. Singh,

ECS J. Solid State Sci. Technol. 9 (2020) 055004

25.

Normally-off AlN/β-Ga₂O₃ field-effect transistors using polarization-induced doping,

K. Song, H. Zhang, H. Fu, C. Yang, R. Singh, Y. Zhao, H. Sun and S. Long,

J. Phys. D: Appl. Phys. 53 (2020) 345107

26.

Anomalous pressure dependence of the electronic transport and anisotropy in SrIrO₃ films,

 A. Zaitsev, A. Beck, A. Jaiswal, R. Singh, R. Schneider, M. Le Tacon and D. Fuchs,

J. Phys. Cond. Matt. 32 (2020) 345601

27.

Effects of Energetic Ion Irradiation on β-Ga₂O₃ Thin Films,

S. Yadav, Y. Katharria, S. Dash, A. Patra, G. Umapathy, S. Ojha, S. Patel, R. Singh,

ECS J. Solid. Stat. Sci. Technol. 9 (2020) 045015

28

Monolayer MoS₂ transferred on arbitrary substrates for potential use in flexible electronics,

 M. Sharma, A. Singh, and R. Singh,

ACS Appl. Nanomat. 3 (2020) 4445-4453

29.

Exploring conduction mechanism and photoresponse in P-GaN/n-MoS₂ heterojunction diode,

M. Moun and R. Singh,

J. Appl. Phys. 127 (2020) 135702

30.

Surface modification of AlN using organic molecular layer for improved deep UV photodetector performance,

S. Kaushik, T. Naik, A. Ambali, M. Garg, B.R. Tak, M. Ravikanth, V. Ramgopal Rao and R. Singh,

 ACS Appl. Electron. Mater. 2 (2020) 739 - 746

31.

High temperature performance of GaSe nanosheet based broadband photodetector,

S. Sorifi, M. Moun, S. Kaushik and R. Singh,

ACS Appl. Electron. Mater. 2 (2020) 670 - 676

32

Radiation sustenance of HfO₂/b-Ga₂O₃ metal-oxide-semiconductor capacitors: Gamma irradiation study,

N. Manikanthababu, B.R.Tak, Prajna Kunche, R. Singh and B. Panigrahi,

Semicond. Sci. Technol. 35 (2020) 055024

33.

Effect of g-irradiation on Schottky and ohmic contacts on AlGaN/GaN heterostructures,

C. Sharma, A.K. Visvakarma, R. Laishram, A. Kumar, D.S. Rawal, S. Vinayak and R. Singh,

 Microelectronics Reliability 105 (2020) 113565

34.

Understanding γ-ray Induced Instability in AlGaN/GaN HEMTs using a Physics-based Compact Model,

C. Sharma, N. Modolo, Tian-Li Wu, M. Meneghini, G. Meneghesso, E. Zanoni, A.K. Visvkarma, S. Vinayak and R. Singh,

IEEE Transactions on Electron Devices 67 (2020) 1126 – 1131

35.

Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT,

K. Narang, R.K. Bag, V.K. Singh, A. Pandey, S.K. Saini, R. Khan, A. Arora, M.V.G. Padmavati, R. Tyagi and R. Singh,

J. Alloys Comp. 815 (2020) 152283

S. No.

2019

36.

Wearable gallium oxide solar blind photodetectors on muscovite mica having ultrahigh photoresponsivity and detectivity with added high temperature functionalities,

B.R. Tak, V. Gupta, A. Kapoor, Y.H. Chu and R. Singh,

ACS Appl. Electron. Mater. 11 (2019) 2463 – 2470

37.

Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization,

M. Garg, A. Kumar, X. Li, H. Sun, R. Singh,

J. Alloys Comp. 806 (2019) 852 – 857

38.

Suppression of twinning and enhanced electronic anisotropy of SrIrO₃ films,

A.K. Jaiswal, R. Schneider, R. Singh and D. Fuchs,

Appl. Phys. Lett. 115 (2019) 031904

39.

Giant UV photorespsonse of GaN-based photodetectors by surface modification using phenol functionalized posphyrin organic molecules,

M. Garg, B.R. Tak, V.R. Rao and R. Singh,

ACS Appl. Mater. Interfaces 11 (2019) 12017-12026

40.

Investigations of the degradations in Power GaN-on-Si MIS HEMTs subjected to cumulative g- ray irradiation,

C. Sharma, N. Modolo, H.-H. Chen, Y.-Y. Tseng, S.-W. Tang, M. Meneghini, G. Meneghesso, E. Zanoni, R. Singh, T.-L Wu,

Microelectronics Reliability 100-101 (2019) 113349

41.

Study of photoresponse behaviour of high barrier Pd/MoS₂/Pd photodetector,

M. Moun, A. Singh, B.R. Tak and R. Singh,

J. Phys. D: App. Phys 52 (2019) 325102

42.

Enhanced performance of MSM UV photodetectors by molecular modification of Gallium Nitride using porphyrin organic molecules,

M. Garg, B.R. Tak, V.R. Rao and R. Singh,

IEEE Trans. Elec. Dev. 66 (2019) 2036-2039

43.

Cumulative dose g-irradiation effects on material properties AlGaN/GaN heterostructures and electrical properties of HEMT devices,

C. Sharma, A. Visvkarma, R. Laishram, A. Malik, K. Narang, S. Vinayak and R. Singh,

Semicond. Sci. Technol. 34 (2019) 065024

44.

High temperature photocurrent mechanism of b-Ga2O3 metal-semiconductor-metal solar-blind photodetectors,

B.R. Tak, M. Garg, S. Deewan, C.G.T.-Castanedo, K.-H. Li, V. Gupta, X. Li and R. Singh,

J. Appl. Phys. 125 (2019) 144501

45.

Gamma irradiation effect on performance of b-Ga2O3 metal-semiconductor-metal solar-blind photodetectors for space applications,

B.R. Tak, M. Garg, A. Kumar, V. Gupta and R. Singh,

ECS J. Solid State Sci. Technol. 8 (2019) Q3149-Q3153

46.

Point defect induced work function modulation of b-Ga2O3,

B.R. Tak, A.K. Kapoor, S. Dewan, S. Nagarajan, V. Gupta and R. Singh,

Appl. Surf. Sci. 465 (2019) 973-978

47.

Effect of different precursors on CVD growth of molybdenum disulphide,

A. Singh, M. Moun and R. Singh,

J. Alloys Comp. 782 (2019) 772 – 779

48.

Large area stress free Si layer transfer onto Corning glass substrate using ion-cut, 

R. Pathak, U. Dadwal, K. K. Soni and R. Singh,

Semicond. Sci. Technol. 34 (2019) 025002

S. No.

2018

49.

Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules,

M. Garg, T.R. Naik, R. Pathak, V. R. Rao, X. Li and R. Singh,

J. Appl. Phys. 124 (2018) 195702

50.

Barrier inhomogeneity in microscale Pt/MoS₂ Schottky barrier diode,

M. Moun and R. Singh,

Semicond. Sci. Technol. 33 (2018) 125001

51.

Silicon-silver dendritic nanostructures for enhanced photoelectrochemical splitting of natural water,

U. Dadwal, D. Ali and R. Singh,

Int. J. Hyd. Energy 43 (2018) 22815 – 22826

52.

Understanding of MoS₂/GaN heterojunction diode and its photodetection properties,

M. Moun, M. Kumar, M. Garg, R. Pathak and R. Singh,

Scientific Reports 8 (2018) 11799

53.

Anomalous emission from oxygen incorporated GaN nanowires,

M. Kumar, A. C. Poulose, Y. Nakajima, D. Sakthikumar, V. Kumar and R. Singh,

Physica E 104 (2018) 187-191

54.

Study of electrical behavior of metal-semiconductor contacts on exfoliated MoS₂ flakes,

M. Moun, A. Singh and R. Singh,

Phys. Sta. Sol. (a) 1800188 (2018)

55.

Design and fabrication of InGaN/GaN superlattice based solar cell using photonic crystal structure”

N. Gupta, R. Singh et al,

J. Nanophotonics 12 (2018) 043505

56.

Current transport properties of monolayer graphene/n-Si Schottky diodes,

C.S. Pathak, J.P. Singh and R. Singh,

Semicond. Sci. Technol. 33 (2018) 0550016

57.

Significant improvement in the electrical characteristics of Schottky diodes on molecularly modified gallium nitride,

M. Garg, T.R. Naik, V. R. Rao and R. Singh,

Appl. Phys. Lett. 112 (2018) 163502

58.

In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation,

A. Kumar, R. Singh, P. Kumar, U.B. Singh, K. Asokan, P.A. Karaseov, A.I. Titov and D. Kanjilal,

 J. Appl. Phys. 123 (2018) 161539

59.

Preparation of novel Graphene-PEDOT:PSS nanocomposite films and fabrication of heterojunction diodes with n-Si,

C.S. Pathak, J.P. Singh and R. Singh,

Chem. Phys. Lett. 694 (2018) 75-81

S. No.

2017

60.

Enhancement of thermopower in GaN by ion irradiation and possible mechanisms,

A.     Kumar, R. Singh, K. Asokan and R. Singh,

B.     Appl. Phys. Lett. 111 (2017) 222102

61.

Optimizing the electrical properties of PEDOT:PSS films by co-solvents and their application in polymer photovoltaic cells,

C.S. Pathak, J.P. Singh and R. Singh,

Appl. Phys. Lett. 111 (2017) 102107

62.

Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices grown on SiC substrate,

C. Sharma, R. Laishram, Amit, D. S. Rawal, S. Vinayak, and R. Singh,

AIP Advances 7 (2017) 085209

63.

Study of GaN nanowires converted from b-Ga₂O₃ and photoconduction in single nanowire,

M. Kumar, S. Kumar, N. Chauhan, D. Sakthi Kumar, V. Kumar and R. Singh,

Semicond. Sci. Technol. 32 (2017) 085012

64.

Formation of ultralong GaN nanowires upto millimetre length scale and photoconduction study in single nanowire,

M. Kumar, V. Kumar and R. Singh,

Scripta Materialia 138 (2017) 75

65.

Study of hydrogen implantation-induced blistering in GaSb for potential layer transfer applications,

R. Pathak, U. Dadwal and R. Singh,

J. Phys. D: Appl. Phys. 50, (2017) 285301

66.

Direct evidence of barrier inhomogeneities at metal/AlGaN/GaN interfaces using nanoscopic electrical characterizations,

A. Kumar, R. Kapoor, M. Garg, V. Kumar and R. Singh,

Nanotechnology 28 (2017) 26LT02 (Letter)

67.

Diameter tuning of Ga₂O₃ nanowires using chemical vapour deposition technique, 

M. Kumar, V. Kumar and R. Singh,

Nanoscale Res. Lett. 12 (2017) 185

68.

Investigation of the effect of organic solvents on the electrical characteristics of PEDOT:PSS/p-Si heterojunction diodes,

C.S. Pathak, R. Kapoor, J.P. Singh and  R. Singh,

Thin Solid Films 622 (2017) 115 – 121

69.

Effect of ammonification temperature on the formation of coaxial GaN/Ga₂O₃ nanowires,

M. Kumar, G. Sarau, M. Heilmann, S. Christiansen, V. Kumar and R. Singh,

J. Phys. D: Appl. Phys. 50 (2017) 035302

S. No.

2016

70.

Understanding current transport at Ni/GaN interface using low noise frequency spectroscopy,

A. Kumar, V. Kumar and R. Singh,

J. Phys. D: Appl. Phys. 49 (2016) 47LT01 (Letter)

71.

Studies on the thermal stability of Ni/GaN and Pt/GaN Schottky barrier diodes,

A. Kumar, S. Mahajan, S. Vinayak and R. Singh,

Mater. Res. Exp. 3 (2016) 085901

72.

Study of photoconduction properties of CVD grown b–Ga₂O₃ nanowires,

S. Kumar, S. Dhara, R. Agarwal and R. Singh,

J. Alloys & Comp. 683 (2016) 143-148

73.

Enhanced thermionic emission and low 1/f noise in exfoliated graphene/GaN Schottky barrier diode,

A. Kumar, R. Khashid, A. Ghosh, V. Kumar and R. Singh,

ACS Appl. Mater. Interfaces 8 (2016) 8213-8233

74.

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes,

A. Kumar, M. Heilmann, M. Latzel, R. Kapoor, I. Sharma, M. Göbelt, S. H. Christiansen, V. Kumar and R. Singh.

Scientific Reports 6 (2016) 27553

75.

Physical mechanism of surface blistering process in H-implanted Ge,

U. Dadwal, P. Kumar and R. Singh,

J. Mater. Sci. 51 (2016) 5397-5402

76.

Modification of electrical properties of PEDOT:PSS/p-Si heterojunction diodes by doping with dimethyl sulfoxide,

C.S. Pathak, J.P Singh and R. Singh,

Chem. Phys. Lett. 652 (2016) 162-166

77.

Investigation of significantly high barrier height in Cu/GaN Schottky diode,

M. Garg, A. Kumar, Nagarajan, M. Sopanen and R. Singh,

AIP Advances 6 (2016) 015206

78.

Study of self-induced growth of AlGaAs nanoneedles on silicon substrates using metal organic chemical vapour deposition technique,

R.K. Bag, S. Singh, R. Tyagi, D.K. Pandya and R. Singh,

J. Nanosci. Nanotechnol. 16 (2016) 973-980

79.

MOVPE growth of in situ Ga catalyzed AlGaAs nanowires on sapphire substrates,

R. K. Bag, J. Lohani, R. Tyagi, D.K. Pandya and R. Singh,

J. Mat. Sci.: Mat. Elect. 27 (2016) 2335-2341

S. No.

2015

80.

Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes,

A. Kumar, M. Latzel, M. Heilmann, S. Christiansen, V. Kumar and R. Singh,

Appl. Phys. Lett. 107 (2015) 093502

81.

Temperature dependent 1/f noise characteristics of the Fe/GaN ferromagnetic Schottky barrier diode, A. Kumar,

 S. Nagarajan, M. Sopanen, V. Kumar and R. Singh,

Semicond. Sci. Technol. 30 (2015) 105022

82.

Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques,

 S. Kumar, G. Sarau, C. Tessarek, M. Goebelt, S. Christiansen, and R. Singh,

Nanotechnology 26 (2015) 335603

83.

Role of growth temperature on the structural, optical and electrical properties of ZnO thin films,

A. Kumar, P. Kumar, K. Kumar, T. Singh, R. Singh, K. Asokan and D. Kanjilal,

J. Alloys and Comp. 649 (2015) 1205 – 1209

84.

Effect of dimenthyl sulfoxide on the electrical properties of PEDOT:PSS/n-Si heterojunction diodes,

C.S. Pathak, J.P. Singh and R. Singh,

Curr. Appl. Phys. 15 (2015) 528 – 534

85.

Study of self-induced growth of AlGaAs nanoneedles on silicon substrates using MOCVD technique,

R. Bag, D.K. Pandya and R. Singh,

J. Nanosci. Nanotechnol. 15 (2015) 1-4

86.

Effect of surface plasmon resonance on the photoluminescence property of Au nanoparticles coated b–Ga₂O₃ nanowires,

S. Kumar and R. Singh,

J. Nanosci. Nanotechnol. 15 (2015) 1-4

87.

Investigation of blistering process in H-implanted semi-polar GaN,

U. Dadwal, D. Buca, T. Wernicke, S. Mantl and R. Singh,

Scripta Materialia 94 (2015) 21-24

88.

Self-catalytic growth of b–Ga₂O₃ nanostructures by chemical vapor deposition,

S. Kumar and R. Singh,

Adv. Eng. Mater. 17 (2015) 709 – 715

S. No.

2014

89.

Multiphonon resonant Raman scattering in non-polar GaN epilayers,

M. Kumar, M. Becker, T. Wernicke and R. Singh,

Appl. Phys. Lett. 104 (2014) 142106

90.

Study of iron-catalyzed growth of b–Ga₂O₃ nanowires and its detailed characterization using TEM, Raman and cathodoluminescence techniques,

S. Kumar, G. Sarau, C. Tessarek, M. Bashouti, A. Hahnel, S. Christiansen and R. Singh,

J. Phys. D: Appl. Phys. 47 (2014) 435101

91.

Barrier height enhancement of Ni/GaN Schottky diode using novel Ru based passivation scheme,

A. Kumar, R. Kaur, A. G. Joshi, S. Vinayak and R. Singh,

Appl. Phys. Lett. 104 (2014) 133510

92.

XPS study of triangular GaN nano/micro-needles grown by MOCVD technique,

M. Kumar, A. Kumar, S.B. Thapa, S. Christiansen and R. Singh,

Mat. Sci. Eng. B 186 (2014) 89 - 93

93.

Sulphide passivation of GaN based Schottky diodes,

A. Kumar, T. Singh, M. Kumar and R. Singh,

Current Applied Physics 14 (2014) 491 – 495

94.

Dynamics of modification Ni/GaN Schottky barrier diodes irradiated at low temperatures by 200 MeV Ag¹⁴⁺ ions,

A. Kumar, T. Kumar, A. Hähnel, D. Kanjilal and R. Singh,

Appl. Phys. Lett. 104 (2014) 033507

95.

The effect of deposition time on the structural and optical properties of b–Ga₂O₃ nanowires grown using CVD technique,

S. Kumar, V. Kumar, T. Singh, A. Hähnel and R. Singh,

J. Nanopart. Res. 16 (2014) 2189

96.

Effect of implantation temperature on the microstructural damage in AlN, 

U. Dadwal, O. Moutanabbir, M. Reiche and R. Singh,

J. Alloys Compounds, 588 (2014) 300 - 304

97.

A comparative study of beta-Ga₂O₃ nanowires grown on different substrates using CVD technique,

S. Kumar, C. Tessarek, S. Christiansen, R. Singh,

J. Alloys Compounds, 552 (2014) 812 - 818

S. No.

2013

98.

Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated using UHV e-beam evaporation,

A. Kumar, S. Arafin, M.C. Amann and R. Singh,

Nanoscale Res. Lett. 8 (2013) 481

99.

Nanofunctional gallium oxide (Ga₂O₃) nanowires/nanostructures and their applications in nanodevices,

S. Kumar and R. Singh,

Phys. Stat. Sol. RRL 7 (2013) 781-792

100.

On the mechanism of blistering phenomenon in high temperature H-implanted GaN,

U. Dadwal and R. Singh,

Appl. Phys. Lett. 102 (2013) 081616

101.

Microstructural and temperature dependent electrical characterization of Ni/GaN Schottky barrier diodes,

A. Kumar, S. Vinayak and R. Singh,

Current Appl. Phys. 13 (2013) 1137 – 1142

102.

Effect of supporting electrolytes on the growth and optical properties of electrochemically deposited ZnO nanorods,

T. Singh, D.K. Pandya and R. Singh,

Optical Lett. 35 (2013) 1493

103.

Concentration dependent structural and optical properties of electrochemically grown ZnO thin films and nanostructures,

T. Singh, D.K. Pandya and R. Singh,

Appl. Surf. Sci. 270 (2013) 578-583

104.

Surface plasmon driven enhancement of UV-emission of electrochemically grown Zn1-xCdxO nanorods using Au nanoparticles,

T. Singh, D.K. Pandya and R. Singh,

J. Alloys Compounds, 552 (2013) 294-298

105.

A comparative study of hydrogen implantation induced blistering and exfoliation in GaN and AlN, U. Dadwal and R. Singh, Jap. J. Appl. Phys. 52 (2013) 08JE12

106.

Growth of aluminum catalyzed AlGaAs nanowires on silicon substrates,

R. K. Bag, P. Mohan, R. Tyagi, S. Singh, A. Kumar, D.K. Pandya and R. Singh,

J. Nanosci. & Nanotechnol., 13 (2013) 1899-1902

107.

Characterization of GaN nanorods fabricated using Ni nanomasking and reactive ion etching technique,

A. Kumar, M. Latzel, C. Tessarek, S. Christiansen and R. Singh,

J. Nano- & Electron. Phys., 5 (2013) 02001

108.

Growth and characterization of Ni catalyzed gallium oxide nanowires on sapphire substrate,

S. Kumar, B. Srinivas Gaud and R. Singh,

J. Nano- & Electron. Phys., 5 (2013) 02003

109.

Effect of implantation temperature on the layer exfoliation of H-implanted germanium,

U. Dadwal, Praveen Kumar and R. Singh,

J. Nano- & Electron. Phys., 5 (2013) 02002

S. No.

2012

110.

Effect of implantation temperature on the blistering behavior of H-implanted GaN,

U. Dadwal, R. Scholz, M. Reiche, P. Kumar, S. Chandra and R. Singh,

Appl. Phys. A (2012).

111.

Electrical and microstructural analyses of 200 MeV Ag¹⁴⁺ ion irradiated Ni/GaN Schottky barrier diode,

A. Kumar, A. Hahnel, D. Kanjilal and R. Singh,

Appl. Phys. Lett. 101 (2012) 153508

112.

Temperature dependence of 1/f noise in Ni/GaN Schottky barrier diode,

A. Kumar, K. Asokan, V. Kumar and R. Singh,

J. Appl. Phys. 112 (2012) 024547

113.

Surface plasmon enhanced bandgap emission of electrochemically grown ZnO nanorods using Au nanoparticles,

T. Singh, D.K. Pandya and R. Singh,

Thin Solid Films, 520 (2012) 4646

S. No.

2011

114.

Hydrogen implantation-induced blistering in Si_0.70Ge_0.30,

R. Singh, I. Radu, R. Scholz, M. Reiche, C. Himcinschi, D. Webb, U. Gösele and S.H. Christiansen,

Semicond. Sci. Technol. 26 (2011) 125001

115.

Annealing studies on the structural and optical properties of electrodeposited CdO thin films,

T. Singh, D.K. Pandya, and R. Singh,

Mater. Chem. Phys. 130 (2011) 1366

116.

Growth of CdO and ZnCdO based novel nanostructures using electrochemical deposition,

T. Singh, D. K. Pandya and R. Singh,

Int. J. Nanosci. 10 (2011) 827

117.

Blistering study of H-implanted InGaAs for potential heterointegration applications,

U. Dadwal, A. Kumar, R. Scholz, M. Reiche, P. Kumar, G. Boehm, M. C. Amann and R. Singh,

Semicond. Sci. Technol. 26 (2011) 085032

118.

Defect formation in GaN epitaxial layers due to SHI irradiation,

A. Kumar, D. Kanjilal, V. Kumar, and R. Singh,

Radiat. Eff. & Def. Solids 166 (2011) 739-742

119.

Investigation of implantation-induced damage in indium phosphide for layer transfer applications,

U. Dadwal, V. Pareek, R. Scholz, M. Reiche, S. Chandra and R. Singh,

J. Nano. Electron. Phys. 3, 1081 (2011).

120.

Investigation of current-voltage characteristics of Ni/GaN Schottky barrier diodes for potential HEMT applications,

A. Kumar, S. Vinayak, V. Kumar and R. Singh,

J. Nano-and Electronic Physics, 3 (2011) 672

121.

Temperature dependence of 1/f noise in GaN epitaxial layer,

A. Kumar, Ashish Kumar, K. Asokan, V. Kumar and R. Singh,

J. Nano-and Electronic Physics, 3 (2011) 676

122.

Template assisted growth of ZnO-based nanowires by electrochemical deposition,

T. Singh, D.K. Pandya, and R. Singh,

J. Nano- & Electronic Physics, 3 (2011) 146

123.

Electrochemical deposition and characterization of elongated CdO nanostructures,

T. Singh, D.K. Pandya, and R. Singh,

Mat. Sci. Engg. B 176 (2011) 945

124.

Synthesis of cadmium oxide doped ZnO nanostructures using electrochemical deposition,

T. Singh, D.K. Pandya, and R. Singh,

J. Alloys & Compounds 509 (2011) 5095

125.

Effect of hydrogen peroxide treatment on the electrical characteristics of Au/ZnO epitaxial Schottky diode,

C.S. Singh, G. Agarwal, G. Durga Rao, Sujeet Chaudhary, and R. Singh,

Mater. Sci. Semicond. Process. 14 (2011) 1

S. No.

2010

126.

The phenomenology of ion implantation-induced blistering and splitting in compound semiconductors,

R. Singh, S. H. Christiansen, O. Moutanabbir, and U. Gösele,

J. Electron. Mat. 39 (2010) 2177 (Review article; Cover Page Article)

127.

Hydrogen implantation-induced large area exfoliation in AlN epitaxial layers,

U. Dadwal, R. Scholz, P. Kumar, D. Kanjilal, S. Christiansen, U. Gösele, and R. Singh,

Phys. Stat. Sol. (a) 207 (2010) 29

128.

Study of implantation-induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications,

R. Singh, U. Dadwal, R. Scholz, O. Moutanabbir, S. Christiansen, and U. Gösele,

 Phys. Stat. Sol. (c) 7 (2010) 44

129.

Surface exfoliation in ZnO by hydrogen implantation and its smoothening by high temperature annealing,

T. Singh, R. Scholz, S.H. Christiansen, U. Goesele, and R. Singh,

Phys. Stat. Sol. (c) 7 (2010) 444

S. No.

2008

130.

Formation of nanovoids/microcracks in high dose hydrogen implanted AlN,

R. Singh, R. Scholz, S. H. Christiansen and U. Gösele,

Phys. Stat. Sol. (a) 205 (2008) 2683

131.

Investigation of blistering kinetics in hydrogen implanted AlN,

 R. Singh, R. Scholz, U. Gösele and S. H. Christiansen,

Semicond. Sci. Technol.  23 (2008) 045007

132.

Etching-back of uniaxially strained silicon on insulator investigated by spectroscopic ellipsometry,

C. Himcinschi, R. Singh, O. Mountanabbir, R. Scholz, M. Reiche, S. H. Christiansen, U. Gösele and D. R. T. Zahn,

Phys. Stat. Sol. (a) 205 (2008) 841

S. No.

2007

133.

Narrow dose window of hydrogen implantation-induced exfoliation in ZnO,

R. Singh, R. Scholz, U. Gösele and S. H. Christiansen,

 Semicond. Sci. Technol. 22 (2007) 1200

134.

Enhancement of wafer bow of free-standing GaN substrates due to high dose hydrogen implantation: Implication for GaN layer transfer applications,

R. Singh, I. Radu, S.H. Christiansen and U. Gösele,

Semicond. Sci. Technol. 22 (2007) 418

135.

Strain relaxation in nanopatterned strained silicon round pillars,

C. Himcinschi, R. Singh, I. Radu, A. P. Milenin, W. Erfurth, M. Reiche, U. Gösele, S. Christiansen, F. Muster and M. Petzold,

Appl. Phys. Lett. 90 (2007) 021902

136.

HDP-CVD oxide to thermal oxide wafer bonding for strained silicon layer transfer application,

R. Singh, I. Radu, M. Reiche, C. Himcinschi, B. Kuck, B. Tillack, U. Gösele and S. H. Christiansen,

 Appl. Surf. Sci. 253 (2007) 3595

137.

Uniaxial strained silicon by wafer bonding and layer transfer,

C. Himcinschi, I. Radu, F. Muster, R. Singh, M. Reiche, M. Petzold, U. Gösele and S. H. Christiansen,

Solid-State Electron.  51 (2007) 226

S. No.

2006

138.

Wafer Direct Bonding: From Advanced Substrate Engineering to Future Applications in Micro/Nanoelectronics,

S. H. Christiansen, R. Singh and U. Gösele,

Proc. IEEE 94 (2006) 2060 (Review Article)

139.

Surface modifications in single crystal surfaces of YBCO upon high energy ion irradiation,

A. Lakhani, V. Ganesan, S. Elizabeth, H.L. Bhat, R. Singh and D. Kajilal,

Nucl. Instrum. Meth. Phys. Rev. B 244 (2006) 120

140.

Relaxation of strain in patterned strained silicon investigated by UV Raman spectroscopy,

C. Himcinschi, I. Radu, R. Singh, A. Milenin, W. Erfurth, D. Webb, M. Reiche, S. H. Christiansen and U. Gösele,

Mater. Sci. and Eng. B. 135 (2006) 184.

141.

sSOI fabrication by wafer bonding and layer splitting of thin SiGe virtual substrates,

I. Radu, C. Himcinschi, R. Singh, M. Reiche, U. Gösele, S. H. Christiansen, D. M. Buca, S. Mantl, R. Loo and M. Caymax,

Mater. Sci. and Eng. B. 135 (2006) 231

142.

Comparison of SiGe virtual substrates for the fabrication of strained silicon-on-insulator (sSOI) using wafer bonding and layer transfer,

M. Reiche, I. Radu, C. Himcinschi, R. Singh, S. H. Christiansen and U. Goesele,

ECS Trans. 3 (No. 7) (2006) 317

143.

Investigation of helium implantation induced blistering in InP,

R. Singh, I. Radu, R. Scholz, C. Himcinschi, U. Gösele and S. H. Christiansen,

J. Lumin. 121 (2006) 379

144.

Low temperature InP layer transfer onto Si by helium implantation and direct wafer bonding,

R. Singh, I. Radu, R. Scholz, C. Himcinschi, U. Gösele and S. H. Christiansen,

Semicon. Sci. Technol. 21 (2006) 1311

145.

Formation of nanovoids in high-dose hydrogen implanted GaN,

I. Radu, R. Singh, R. Scholz, S. Christiansen and U. Gösele,

Appl. Phys. Lett. 89 (2006) 031912

146.

Investigation of hydrogen implantation induced blistering in GaN,

R. Singh, I. Radu, U. Gösele and S. H. Christiansen,

Phys. Stat. Sol. (c) 6 (2006) 1754

S. No.

2005

147.

Investigation of hydrogen implantation induced blistering in SiGe,

R. Singh, I. Radu, M. Reiche, R. Scholz, D. Webb, U. Gösele and S. H. Christiansen,

Mater. Sci. and Eng. B 124-125 (2005) 162

148.

Wafer bonding involving strain-relaxed SiGe,

I. Radu, R. Singh, M. Reiche, U. Gösele and S. H. Christiansen,

 Mater. Sci. and Eng. B 124-125 (2005) 158

149.

Strained silicon on insulator (sSOI) by wafer bonding,

S.H. Christiansen, R. Singh, I. Radu, M. Reiche, U. Gösele, D. Webb, S. Bukalov and B. Dietrich,

Mater. Sci. Semicon. Process.  8 (2005) 197

S. No.

2002

150.

Temperature dependence of 1/f noise in Pd/n-GaAs Schottky barrier diode,

R. Singh and D. Kanjilal,

J. Appl. Phys. (2002) 411

151.

In situ resistivity studies of 200 MeV ¹⁰⁷Ag¹⁴⁺ ion irradiated n-GaAs epitaxial layers,

R. Singh, S. K. Arora, J. P. Singh, Renu Tyagi, S. K. Agarwal and D. Kanjilal,

Vacuum 65 (2002) 39

152.

In situ current-voltage characterization of swift heavy ion irradiated Au/n-GaAs
Schottky diode at low temperature,

R. Singh, S. K. Arora, J. P. Singh and D. Kanjilal,

Radiat. Eff. and Def. in Solids 157 (2002) 367

S. No.

2001

153.

Experimental investigation of 200 MeV ¹⁰⁷Ag¹⁴⁺ ion induced modifications in n-GaAs epitaxial layer by in situ resistivity and Hall measurements,

R. Singh, S.K.
Arora, J.P. Singh, Renu Tyagi, S.K. Agarwal and D Kanjilal, Mater. Sci. and Eng. B 86 (2001) 228

154.

Swift heavy ion induced modification of electrical characterisitcs of Au/n-Si Schottky barrier diode,

R. Singh, S. K. Arora and D. Kanjilal,

Mater. Sci. Semicon. Process.  4 (2001) 425

155.

Temperature-dependent roughness of electronically excited InP surfaces,

J. P. Singh, R. Singh, N. C. Mishra, D. Kanjilal and V. Ganesan,

J. Appl. Phys. 90 (2001) 5968

156.

Modification of icosahedral quasicrystal Al₆₅Cu₂₀Fe₁₅ by 170 MeV ⁵⁸Ni¹²⁺ beam,
A. Kanjilal, R. Singh and R. Chatterjee,

Mater. Res. Bull. 36 (2001) 2323

157.

Nanoscale defect formation on InP surface by swift gold ion impact,

J. P. Singh,
R. Singh, N. C. Mishra, V. Ganesan and D. Kanjilal,

Nucl. Instr. and Meth. B 179 (2001) 37

S. No.

2000

158.

Temperature dependence of current-voltage characteristics of Au/n-GaAs epitaxial Schottky diode,

R. Singh, S. K. Arora, Renu Tyagi, S. K. Agarwal and D. Kanjilal,

Bull. Mater. Sci. 23 (2000) 471

159.

Effect of swift heavy ion irradiation on the electrical characteristics of Ag/n-Si Schottky diode, R. Singh,

 S. K. Arora, J. P. Singh, F. Singh and D. Kanjilal,

Indian J. Eng. Mater. Sci. 7 (2000) 298

160.

Ion beam induced mass transport and correlated structure formation on semiconductor surfaces,

J. P. Singh, N. C. Mishra, R. Singh, F. Singh, V. Ganesan and D. Kanjilal,

Indian J. Eng. Mater. Sci. 7 (2000) 310

161.

Electronic excitation induced mass transport on 200 MeV ¹⁰⁷Ag¹⁴⁺ ion irradiated Si surface,

J. P. Singh, R. Singh, D. Kanjilal, N. C. Mishra and V. Ganesan,

J. Appl.
Phys. 87 (2000) 2742

S. No.

1999

162.

In situ 1/f noise studies on swift heavy ion irradiated p-type silicon,

S. K. Arora,
R. Singh, R. Kumar, D. Kanjilal and G. K. Mehta,

Nucl. Instr. and Meth. B
156 (1999) 265

163.

Swift heavy ion-based materials science research at NSC,

J. P. Singh, R. Singh, S. Ghosh, A. Tripathi, D. Kabiraj, S. Gupta, T. Som, Ravi Kumar, S. K. Arora, K. Asokan, D. K. Avasthi, D. Kanjilal, N. C. Mishra and G. K. Mehta,

Nucl. Instr. and Meth. B 156 (1999) 206

164.

Electronic transport and 1/f noise studies in 250 MeV ¹⁰⁷Ag ion irradiated
La_0.75Ca_0.25MnO₃ thin films,

S. K. Arora, Ravi Kumar, R. Singh, D. Kanjilal, G. K.
Mehta, Ravi Bathe, S. I. Patil and S. B. Ogale,

J. Appl. Phys. 86 (1999) 4452